Fast Response Self-Powered Solar-Blind UV Photodetector Based on NiO/Ga2O3 P-N Junction

Jinpei Wang,Qing Li,Wei Mi,Di Wang,Mingsheng Xu,LongFei Xiao,Xingcheng Zhang,Chongbiao Luan,Jinshi Zhao

DOI: https://doi.org/10.1016/j.mssp.2024.109084

IF: 4.1

2025-01-01

Materials Science in Semiconductor Processing

Abstract:The wide-bandgap semiconductor Ga2O3 exhibits significant promise for application in solar-blind photodetectors (SBPDs) owing to its unique properties. Nevertheless, its practical implementation in photodetectors (PDs) is impeded by the inherent limitations of slow response/recovery times and the intricacies associated with p-type doping, necessitating further scientific research and technological advancements to overcome these challenges. A fast response self-powered SBPD based on p-NiO/n-Ga2O3 heterojunctions constructed by magnetron sputtering method. The effect of different oxygen partial pressures in the sputtering gas on the performance of NiO films and heterojunction PDs was investigated. Through the manipulation of the oxygen partial pressure, p-n junction PDs were successfully prepared, and the optimization of their optical performance was achieved. Irradiated with 254 nm ultraviolet light, the photodetector (PD) with an oxygen partial pressure of 50 % exhibited excellent rectification characteristics, with maximum optical responsivity at zero bias (5.08 mA/W), best detectability (3.19 × 1011 Jones) and fastest response/decay time (62/67 ms). The PDs function autonomously, requiring no external power source, and boast an extremely rapid response time. Our research provides an effective method for the preparation of high-performance heterojunction self-powered SBPD based on Ga2O3 thin films.