Abstract:This article presents a pair of W-band phased-array transmitter (TX) and receiver (RX) chipsets in a 0.13- $\mu \text{m}$ SiGe BiCMOS process for high data-rate wireless communication. Both the chips integrate four compact front-end channels in 2 $\times $ 2 distribution, and the distance between the adjacent RF pads is less than 1.8 mm ( $0.56\lambda $ at 90 GHz) to fit for the tight antenna array and enable array scaling by tiling multiple unit cells. A 6-bit active phase shifter based on the improved phase-inverting variable gain amplifiers is leveraged to achieve high phase-shift precision and bandwidth concurrently. A noise reduction technique using a parallel inductor to resonate with the parasitic capacitors of the cascode transistors is adopted in the low-noise amplifier design. A novel miniature power combiner, which occupies a much more compact area than the Wilkinson power combiner while delivering great RF performance, is proposed and elaborately analyzed. System-level calibration for local oscillator (LO) leakage and dc-offset suppression is enabled by introducing digitally controlled current sources into the up-conversion and down-conversion mixers. On-wafer measurements for the TX chip exhibit a single-channel IF-to-RF conversion gain (CG) of 26 dB, a competitively high output 1-dB compression point (OP $_{\mathrm {1\,dB}}$ ) of 11 dBm. The RX chip achieves an RF-to-IF CG of 19.5 dB with 9-/14-GHz IF/RF 3-dB bandwidth, a noise figure of 7.7 dB, and an input 1-dB compression point of −28 dBm. The phase-shift characteristics are verified by the TX/RX front-end measurements, achieving a 6-bit phase resolution with minimum rms phase/gain error smaller than 0.83°/0.45 dB and a large phase-shift bandwidth higher than 20 GHz. Preliminary wireless transmission test using a low-cost die-on-printed circuit board (PCB) prototype demonstrates wireless data rates of 1.6 and 0.8 gigabits per second (Gb/s) at distances of 0.4 and 1 m with 256-quadratic-amplitude modulation (QAM) and 16-QAM modulated signals, respectively.

A 26-Gb/s 140-Ghz OOK CMOS Transmitter and Receiver Chipset for High-Speed Wireless and Dielectric Waveguide Communication

A 26-Gb/s 140-Ghz OOK CMOS Transmitter and Receiver Chipset for High-Speed Proximity Wireless Communication

D-band CMOS Transmitter and Receiver for Multi-Giga-bit/sec Wireless Data Link

Integrated D-Band Transmitter and Receiver for Wireless Data Communication in 65 Nm Cmos

Design of a Low Power 60ghz OOK Receiver in 65nm CMOS Technology

Low power high data rate GHz range receiver in 40nm CMOS technology

A Low-Power Low-Cost 45-Ghz OOK Transceiver System in 90-Nm CMOS for Multi-Gb/s Transmission

A 110-to-170-ghz OOK Transmitter with 40-Gb/s Data Rate and 40-Db On-Off Ratio in 28-Nm CMOS

A D -Band OOK Transmitter With 50-GHz Bandwidth Achieving 32-Gbps Data Rate in 28-nm CMOS

A 15-Gbps 50-mW 140-GHz OOK Transmitter in a 40-nm CMOS Process

A Fully Integrated 220-GHz Transmitter and Receiver System for High-Speed Wireless Communication

An Energy-Efficient 10-Gb/s CMOS Millimeter-Wave Transceiver with Direct-Modulation Digital Transmitter and I/Q Phase-Coupled Frequency Synthesizer

A 220-Ghz 50-Gb/s Silicon-Based Transmitter and Receiver System with Chip-to-Waveguide Transition

A 60-Ghz OOK Receiver with an On-Chip Antenna in 90 Nm CMOS.

A 6.1mW 5Mb/s 2.4GHz transceiver with F-OOK modulation for high bandwidth and energy efficiencies

A low power 60GHz OOK transceiver system in 90nm CMOS with innovative on-chip AMC antenna

A 40-Gb/s Quarter-Rate SerDes Transmitter and Receiver Chipset in 65-Nm CMOS

W-band Scalable 2×2 Phased-Array Transmitter and Receiver Chipsets in SiGe BiCMOS for High Data-Rate Communication.

A 60-Ghz 3.0-Gb/s Spectrum Efficient BPOOK Transceiver for Low-Power Short-Range Wireless in 65-Nm CMOS

A 70 Mw 25 Gb/s Quarter-Rate SerDes Transmitter and Receiver Chipset with 40 Db of Equalization in 65 Nm CMOS Technology

A Fully Integrated, Dual Channel, Flip Chip Packaged 113 GHz Transceiver in 28nm CMOS supporting an 80 Gb/s Wireless Link