Ultra-high-data-rate 60-Ghz CMOS Transceiver for Future Radio Access Network
Rui Wu,Ryo Minami,Yuuki Tsukui,Seitaro Kawai,Yuuki Seo,Shinji Sato,Kento Kimura,Satoshi Kondo,Tomohiro Ueno,Nurul Fajri,Shoutarou Maki,Noriaki Nagashima,Yasuaki Takeuchi,Tatsuya Yamaguchi,Ahmed Musa,Korkut Kaan Tokgoz,Teerachot Siriburanon,Bangan Liu,Yun Wang,Jian Pang,Ning Li,Masaya Miyahara,Kenichi Okada,Akira Matsuzawa
DOI: https://doi.org/10.1109/asicon.2017.8252653
2017-01-01
Abstract:This paper presents 60-GHz CMOS transceivers aiming for the IEEE802.11ay standard, which are integrated with 4-channel bonding techniques. The transceivers can be classified into two categories: a 1-stream transceiver and a 2-stream frequency-interleaved (FI) transceiver. The transceivers are both fabricated in a standard 65-nm CMOS technology. The 1-stream transceiver achieves a TX-to-RX EVM of -17dB and can transmit 28.16Gb/s in 16QAM by using a 4-bonded channel. The front-end consumes 251mW and 220mW from a 1.2-V supply in transmitting and receiving mode, respectively. The 2-stream FI transceiver achieves 42.24Gb/s data-rate in 64QAM by operating two FI transceivers at the same time. Each FI transceiver uses 2-channel-bonded spectrum with different carrier frequencies, which realizes the TX-to-RX EVM of -24.1dB and -23.0dB, respectively. The whole transceiver consumes 544mW and 432mW from a 1.2V supply in transmitting and receiving mode, respectively.