Abstract:Phase modulation plays a crucial role in various terahertz applications, including biomedical imaging, high-rate communication, and radar detection. Existing terahertz phase shifters typically rely on tuning the resonant effect of metamaterial structures to achieve a narrow bandwidth phase shift. However, the terahertz band offers a wide bandwidth resource, which has great advantages in high longitudinal resolution detection, high-capacity communication, spectral imaging and so on. Here, we propose and demonstrate an ultrawideband terahertz phase shifting mechanism that utilizes an optical conductivity tuneable interface combined with a non-resonant metasurface operating in the total internal reflection geometry. This approach effectively modulates the phase of the reflected terahertz signal in an ultrawideband. To implement this mechanism, we designed a structure consisting of graphene-loaded non-resonant periodic metal microslits arranged in the total internal reflection geometry. By controlling the gate voltage of the graphene within a range of 5 V, an averaged ~120° continuous phase shift in the frequency range of 0.4 to 1.2 THz was achieved. Notably, in the frequency range of 1 to 1.2 THz, the phase modulation exhibited a linear relationship with the driving voltage. Our device demonstrated minimal fluctuations in the reflected amplitude, with a deviation of less than 1 dB and an insertion loss of less than 10 dB. Additionally, the modulation speed of this solid-state device reached the kHz level. Remarkably, the phase modulation bandwidth ({\Delta}f/f) achieved approximately 100% of the arithmetic centre frequency at 0.8 THz, surpassing the definition of ultrawideband, which typically encompasses 20% of the centre frequency. To the best of our knowledge, this is the first and most wideband phase shifter developed for the terahertz regime to date.

Ka-Band Metal-Insulator-Graphene Diode-based Thin-Film Cascaded Reflective-Type Phase Shifter

An E-band Subradix Active Phase Shifter with < 0.69° RMS Phase Error and 16-Db Attenuation in 28-Nm CMOS

Low-cost Compact Analogue Phase-Shifter Based on CVD Graphene-diode for Smart Surfaces Applications

29-/35 GHz Dual-band High-Gain Phase Shifter with Hybrid -Networks

Planar Tunable High-Temperature Superconductor Microwave Broadband Phase Shifter with Patterned Ferroelectric Thin Film

Ka-Band Reflective-Type Phase Shifter Using Multi-Resonant Loads and Digital Assistive Techniques

A Ka-band 0/Π MEMS Phase Shifter

Design and Optimization of Diamond Mid-Infrared Phase Shifter

A Ka-band 0/∏ MEMS phase shifter

Reflective Liquid-Crystal Phase Shifter based on Periodically Loaded Differential Microstrip Lines

Compact 26–30 GHz Reflection-Type Phase Shifter With 8-Bit Switched Phase Tuning Utilizing Chalcogenide Phase-Change Switches

Ka-Band 4-Bit Phase Shifter With Low Phase Deviation

A 44-52 GHz Reflection-type Phase Shifter with 1.4° Phase Resolution in 28nm CMOS Process

A Compact Ka-Band Hybrid Analog/Digital Phase Shifter with GaAs Technology

Continuously Variable W-band Phase Shifters Based on MEMS-actuated Conductive Fingers

Phase-change Material Enabled Silicon Phase Shifter Actuated by a Highly Durable Graphene Microheater

Design and Performance of a Wideband Ka-Band 5-B MMIC Phase Shifter

A 27–31 ghz 6-Bit Phase Shifter with Low Phase Error/gain Variation in 65 nm CMOS

Electronically Tunable Non-Fullerene Acceptor Based Ka-Band Phase Shifter

Ultrawideband solid-state terahertz phase shifter electrically modulated by tunable conductive interface in total internal reflection geometry

A 28ghz Rf Phase Shifter With High Phase Resolution In 180-Nm Cmos Technology