Growth and Thickness Effect of <100>-Oriented Ternary 0.06Pb(mn1/3nb2/3)o3-0.94Pb(zr0.48ti0.52)o3 Ferroelectric Thin Films on Silicon Substrate by RF Sputtering

Zhuo Chen,Xianyao Jiang,Yuyang Qian,Yile Gu,Qinyao Zhu,Yuan Yao,Zhongchen Gao,Zhihua Duan,Tao Wang,Yanxue Tang,Xiangyong Zhao,Feifei Wang
DOI: https://doi.org/10.1016/j.jeurceramsoc.2024.116951
IF: 5.7
2025-01-01
Journal of the European Ceramic Society
Abstract:The development of advanced piezoelectric thin films with large piezoelectric response on silicon substrate is a crucial technology for piezoelectric microelectromechanical systems applications. In this work, high-quality <100>-oriented 0.06Pb(Mn1/3Nb2/ 3)O-3-0.94Pb(Zr0.48Ti0.52)O-3 (PMN-PZT) thin films were grown on the Pt/Ti/SiO2/Si substrate by sputtering. X-ray diffraction, scanning electron microscopy, and piezoresponse force microscopy were utilized to characterize the phase, morphologies, and domain structures. The growth parameters were optimized and thickness-dependent electrical properties were established. Well-crystalized micronthick PMN-PZT films with high remnant polarization of 49 mu C/cm(2) and giant piezoelectric coefficient (d(33)) up to 484 pC/N (about twice of the polycrystalline PMN-PZT thin film and thrice of the Pb(Zr0.52Ti0.48)O-3 thin film) were obtained. The excellent electrical properties make it highly advantageous for applications in MEMS devices.
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