Integration-Friendly, Chemically Stoichiometric BiFeO3 Films with a Piezoelectric Performance Challenging That of PZT.

Miaomiao Niu,Hanfei Zhu,Yingying Wang,Jing Yan,Ning Chen,Peng Yan,Jun Ouyang
DOI: https://doi.org/10.1021/acsami.0c07155
IF: 9.5
2020-01-01
ACS Applied Materials & Interfaces
Abstract:As a prototype single-phase multiferroic, BiFeO3 exhibits excellent electrical, magnetic, and magnetoelectric properties, appealing to many modern technological applications. One of its overlooked merits is a high piezoelectric performance originating from its large remnant polarization (P-r) and low dielectric constant (epsilon(r)). Furthermore, its high Curie temperature and large coercive field ensure good stabilities in device applications. However, to achieve close-to-intrinsic properties, a high processing temperature is usually used for the preparation of highly crystalline (epitaxial or highly oriented) BiFeO3 films. Proliferation of defects due to loss of volatile Bi2O3 in the high-temperature process and its incompatibility with CMOS-Si technologies have hindered the development of BiFeO3 film-based piezoelectric micro-electro-mechanical systems (piezo-MEMS) devices. In this work, we successfully sputter-deposited highly (100) oriented BiFeO3 thick films (similar to 1 mu m) on Si at 350 degrees C through the use of a conductive perovskite buffer layer of LaNiO3. Formation of bulk and interfacial defects is suppressed by the combination of a low deposition temperature and an oxygen-rich processing atmosphere, resulting in chemically stoichiometric BiFeO3 films. These films displayed a high P-r (similar to 60 mu C.cm(-2)), a low epsilon(r) (similar to 200), and a small dielectric loss (<0.02), as well as large coercive and self-bias voltages in their as-grown and aged states. Together with a large transverse piezoelectric coefficient (e(31,f) similar to -2.8 C.m(-2)), excellent electromechanical performances with outstanding fatigue and aging resistances are demonstrated in patterned BiFeO3-Si cantilever devices. These integration-friendly BiFeO3 films are ideal replacements of PZT films in piezo-MEMS applications.
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