Fast ${\text{mos}_{2}}$ Photodetector with Ultralow Contact Resistance

Wangheng Pan,Anran Wang,Hu Chen,Fengqiu Wang

DOI: https://doi.org/10.1109/cleo-pr60912.2024.10676788

2024-01-01

Abstract:We demonstrate a fast MoS2 photodetector with ultralow contact resistance (<1000 Ω) by using bismuth electrodes. The device exhibits a rise time of 10.5 μs, which is one of the highest among similar devices.

What problem does this paper attempt to address?

A fast 2D MoS2 photodetector with ultralow contact resistance

Wangheng Pan,Anran Wang,Xingguang Wu,Xialian Zheng,Hu Chen,Shuchao Qin,Zheng Vitto Han,Siwen Zhao,Rong Zhang,Fengqiu Wang

DOI: https://doi.org/10.1039/d4nr02860k

IF: 6.7

2024-10-27

Nanoscale

Abstract:Two-dimensional (2D) transition metal dichalcogenides (TMDs), such as molybdenum disulfide (MoS 2 ), hold great promise for next-generation nanoelectronic and nanophotonic devices. While high photoresponsivity and broad spectral coverage (UV–IR) have been reported, the slow response time of MoS 2 photodetectors caused by their unfavorable RC characteristics is still a major limit in current devices. Once the RC limit issue is resolved, the intrinsic saturation drift velocity of electrons in TMDs (∼10 6 cm s −1 ) may enable GHz opto-electronic operations. Recent breakthroughs in device fabrication technology have enabled significant progress in exploring the possibilities of high-speed TMD photodetectors. In this work, using semi-metallic bismuth contacts to suppress metal-induced gap states (MIGS), an MoS 2 photodetector with ultra-low contact resistance ( 1 A W −1 ). In particular, using an acousto-optic modulator (AOM)-modulated 532 nm laser, a −3 dB cutoff frequency of ∼70 kHz was obtained, which was corroborated by directly observed rise/fall times (on a scale of 10 μs). An extrinsic effect, where defective states of BN induce a negative shift in the photocurrent baseline was further identified and attributed to charge-induced screening, elucidating where a device can exhibit different dynamic and static response behaviors simultaneously. Our results may shed light for future GHz optoelectronic applications employing TMDs as a platform.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Mos2 Nanosheet Photodetectors With Ultrafast Response

Weiwei Tang,Changlong Liu,Lin Wang,Xiaoshuang Chen,Man Luo,Wanlong Guo,Shaowei Wang,Wei Lu

DOI: https://doi.org/10.1063/1.5001671

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Two-dimensional layered materials, such as molybdenum disulfide, are emerging as an exciting material system for future electronics due to their unique electronic properties and atomically thin geometry. In this work, MoS2-based FETs are fabricated using mechanical cleavage and standard photolithographic and metal evaporation techniques, and the detector exhibits a good ohmic contact. We show that the multilayer molybdenum disulfide photodetector has a fast photoresponse as short as 42 mu s. The fast photodetector response is due to the decrease in the trap states in MoS2 flakes compared to monolayer MoS2, making its photoresponse time close to its intrinsic response. The large photocurrent with the responsivity and external quantum efficiency of 59 A/W and 13 800% for the wavelength of 532 nm was also measured. The fast response time, high responsivity, and the ease of fabrication of these devices make them important components for future optoelectronic devices. Published by AIP Publishing.
Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.

H. Deng,N. Dai,Changyi Pan,Ziwei Yin,Yi Zhang,Yufeng Shan

DOI: https://doi.org/10.1021/acsami.1c16891

2021-11-02

Abstract:Two-dimensional transition metal dichalcogenide-based phototransistors have been intensively studied in recent years due to their high detection rate and flexibility. However, the photogating effect, usually appearing in the devices, leads to a poor transient photoresponse, which slows down the imaging rate of the camera based on the devices. Here, we demonstrate a dual-channel two-dimensional field-effect phototransistor composed of a vertical molybdenum disulfide (MoS2) p-n homojunction as the sensitizing channel layer. Owing to the effective separation by the vertical built-in electric field and rapid migration of photoexcited electrons and holes in the separated channels, the fabricated dual-channel FET device simultaneously exhibits prominent responsivity and greatly improved time response in comparison to the pristine MoS2 FET detectors. Excellent device performance has been achieved, with a responsivity of 3.4 × 104 A/W at a source-drain voltage (VDS) of 1 V, corresponding to a detectivity (D*) of 1.9 × 1013 Jones@532 nm and a gain of more than 105 electrons per photon, an external quantum efficiency of 9.6%, and a response time of tens of milliseconds. Especially, the response time of the dual-channel FET device is 3 orders of magnitude faster than that of the pristine device. Our results provide a new way to overcome the inherent photogating drawback of two-dimensional FET optoelectronic devices and to develop a related high frame rate imaging system.

Physics,Engineering,Medicine,Materials Science
Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

Haining Wang,Changjian Zhang,Weimin Chan,Sandip Tiwari,Farhan Rana

DOI: https://doi.org/10.1038/ncomms9831

2015-10-08

Abstract:The strong light emission and absorption exhibited by single atomic layer transitional metal dichalcogenides in the visible to near-infrared wavelength range makes them attractive for optoelectronic applications. In this work, using two-pulse photovoltage correlation technique, we show that monolayer molybdenum disulfide photodetector can have intrinsic response times as short as 3 ps implying photodetection bandwidths as wide as 300 GHz. The fast photodetector response is a result of the short electron-hole and exciton lifetimes in this material. Recombination of photoexcited carriers in most two-dimensional metal dichalcogenides is dominated by non-radiative processes, most notable among which is Auger scattering. The fast response time, and the ease of fabrication of these devices, make them interesting for low-cost ultrafast optical communication links.

Mesoscale and Nanoscale Physics,Materials Science
High Performance Photodetector Based On Pd-Single Layer Mos2 Schottky Junction

Xue-Feng Wang,Hai-Ming Zhao,Shuhong Shen,Yu Pang,Peng-Zhi Shao,Yu-Tao Li,Ning-Qin Deng,Yu-Xing Li,Yi Yang,Tian-Ling Ren

DOI: https://doi.org/10.1063/1.4967984

IF: 4

2016-01-01

Applied Physics Letters

Abstract:Due to excellent photoelectric property of single layer molybdenum disulphide (SL MoS2), different kinds of photodetectors based on SL MoS2 have been reported. Although high photosensitivity was obtained, the rising and decay time of photocurrent were relatively large (>300 ms) when the current reached up to mu A order. In this paper, we demonstrate a high sensitive and fast barrier type photodetector based on Pd-SL MoS2 Schottky junction. The photosensitivity can reach up to 0.88 A/W at 425 nm laser. Compared with SL MoS2 photodetectors based on ohmic contact, our device shows much shorter rising and a decay time of 24.7 ms and 24.5 ms, respectively, exhibiting the merit of barrier type photodetector. Published by AIP Publishing.
Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

Huijuan Zhao,Yufan Wang,Senyao Tang,Yamin Cheng,Shuhan Li,Jiaxuan Wang,Xiaohan Guo,Weiqi Wang,Qiyuan Zhou,Fengyuan Xuan,Yuanfang Yu,Li Gao

DOI: https://doi.org/10.1063/5.0218977

IF: 4

2024-07-15

Applied Physics Letters

Abstract:Two-dimensional (2D) materials are ideal candidates for building optoelectronic devices, owing to their fascinating photoelectric properties. However, most photodetectors based on individual 2D materials face difficulties in achieving both high responsivity and fast response. In this paper, we have fabricated high-quality vertically stacked MoS2/MoSe2 van der Waals (vdW) heterostructures using dry transfer method. The strong built-in electric field at the interface of type II heterostructure effectively facilitates the separation of photogenerated carriers. The vdW contact between channel material and transferred metal electrode effectively avoids the introduction of defects. These methods effectively enhance the performance of hybrid devices. Under 532 nm laser illumination, this photodetector exhibits high responsivity (528.1 A/W) and fast photoresponse (rise time ∼3.0 μs/decay time ∼31.3 μs). Furthermore, we demonstrated single-pixel image sensing capabilities of the device at room temperature across various modulation frequencies. Importantly, imaging at a frequency as high as 15 000 Hz was attained, indicating its great potential for next-generation, high-performance single-pixel image sensing applications.

physics, applied
High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Tianyou Zhang,Yujie Chen,Pengfei Xu,Zeru Wu,Yanfeng Zhang,Lin Liu,Chunchuan Yang,Hui Chen,Siyuan Yu

DOI: https://doi.org/10.1364/acpc.2016.af3f.5

2016-01-01

Abstract:High-responsivity ultra-sensitive photodetectors are crucial for a broad range of applications in various fields. This work demonstrates a highly sensitive photodetector fabricated by using monolayer molybdenum disulfide (MoS 2 ), a promising semiconductor from the family of transition-metal dichalcogenide, showing a promising photoresponsivity (230 mA/W @532 nm) in the wavelength of visible light region.
Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Xudong Wang,Peng Wang,Jianlu Wang,Weida Hu,Xiaohao Zhou,Nan Guo,Hai Huang,Shuo Sun,Hong Shen,Tie Lin,Minghua Tang,Lei Liao,Anquan Jiang,Jinglan Sun,Xiangjian Meng,Xiaoshuang Chen,Wei Lu,Junhao Chu

DOI: https://doi.org/10.48550/arXiv.1502.04439

2015-02-16

Mesoscale and Nanoscale Physics

Abstract:Photodetectors based on two dimensional materials have attracted growing interest. However, the sensitivity is still unsatisfactory even under high gate voltage. Here we demonstrate a MoS2 photodetector with a poly(vinylidene fluoride-trifluoroethylene) ferroelectric layer in place of the oxide layer in a traditional field effect transistor. The dark current of the photodetector is strongly suppressed by ferroelectric polarization. A high detectivity 2.21012 Jones) and photoresponsitivity (2570 A W) detector has been achieved under ZERO gate bias at a wavelength of 635 nm. Most strikingly, the band gap of few-layer MoS2 can be tuned by the ultra-high electrostatic field from the ferroelectric polarization. With this characteristic, photoresponse wavelengths of the photodetector are extended into the near infrared (0.85-1.55m). A ferroelectrics optoelectronics hybrid structure is an effective way to achieve high performance 2D electronic optoelectronic devices.
Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector

Zhuhua Xu,Miao He,Qinke Wu,Chengcheng Wu,Xubiao Li,Bilu Liu,Man‐Chung Tang,Jie Yao,Guodan Wei

DOI: https://doi.org/10.1002/advs.202207743

IF: 15.1

2023-02-21

Advanced Science

Abstract:The novel organic material BTP‐4F is stacked with monolayer MoS2 to form a heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current for the photodetector, which exhibits excellent responsivity of 3.2 A W−1, detectivity of 1.6 × 109 Jones, high external quantum efficiency of 756%, and fast response time of 332/274 μs. The 2D MoS2 with superior optoelectronic properties such as high charge mobility and broadband photoresponse has attracted broad research interests in photodetectors (PD). However, due to the atomic thin layer of 2D MoS2, its pure photodetectors usually suffer from inevitable drawbacks such as large dark current, and intrinsically slow response time. Herein, a new organic material BTP‐4F with high mobility is successfully stacked with 2D MoS2 film to form an integrated 2D MoS2/organic P–N heterojunction, facilitating efficient charge transfer as well as significantly suppressed dark current. As a result, the as‐obtained 2D MoS2/organic (PD) has exhibited excellent response and fast response time of 332/274 μs. The analysis validated photogenerated electron transition from this monolayer MoS2 to subsequent BTP‐4F film, whereas the transited electron is originated from the A− exciton of 2D MoS2 by temperature‐dependent photoluminescent analysis. The ultrafast charge transfer time of ≈0.24 ps measured by time‐resolved transient absorption spectrum is beneficial for efficient electron–hole pair separation, greatly contributing to the obtained fast photoresponse time of 332/274 μs. This work can open a promising window to acquire low‐cost and high‐speed (PD).

materials science, multidisciplinary,nanoscience & nanotechnology,chemistry
2D MoS2/CuPc heterojunction based highly sensitive photodetectors through ultrafast charge transfer

Z.H Xu,L. Tang,S.W Zhang,J.Z Li,B.L Liu,S.C Zhao,C.J Yu,G.D Wei

DOI: https://doi.org/10.1016/j.mtphys.2020.100273

IF: 11.021

2020-01-01

Materials Today Physics

Abstract:Photodetectors (PD) with high detectivity, high quantum efficiency and fast response are fundamental units to achieve sensors, imagers, and many others functional optoelectronics. Here we demonstrate high performance vertical stacked 2D MoS2/CuPc heterojunction based photodetectors with high sensitivity, high external quantum efficiency and ultrafast response time. The functional p-type organic thin film of CuPc was thermally evaporated on n-type two-dimension (2D) MoS2 monolayer to create an ideal type II heterojunction interface, where ultrafast charge transfer (CT) occur in 16 ps, followed by effective exciton separation and charge collection. As a result, photoresponse time as fast as 436 μs has been obtained for 2D MoS2/CuPc PDs, as well as a profound responsivity of 3.0×103A/W and a detectivity of 2.0 × 1010 Jones with a peak external quantum efficiency (EQE) of 483%. This work suggests a feasible route to develop ultrasensitive visible light photodetector by 2D materials.
Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Gustavo A. Saenz,Goran Karapetrov,James Curtis,Anupama B. Kaul

DOI: https://doi.org/10.1038/s41598-018-19367-1

IF: 4.6

2018-01-19

Scientific Reports

Abstract:The design, fabrication, and characterization of ultra-high responsivity photodetectors based on mesoscopic multilayer MoS2 is presented, which is a less explored system compared to direct band gap monolayer MoS2 that has received increasing attention in recent years. The device architecture is comprised of a metal-semiconductor-metal (MSM) photodetector, where Mo was used as the contact metal to suspended MoS2 membranes. The photoresponsivity R$${\boldsymbol{R}}$$ was measured to be ~1.4 × 104 A/W, which is > 104 times higher compared to prior reports, while the detectivity D* was computed to be ~2.3 × 1011 Jones at 300 K at an optical power P of ~14.5 pW and wavelength λ of ~700 nm. In addition, the dominant photocurrent mechanism was determined to be the photoconductive effect (PCE), while a contribution from the photogating effect was also noted from trap-states that yielded a wide spectral photoresponse from UV-to-IR (400 nm to 1100 nm) with an external quantum efficiency (EQE) ~104. From time-resolved photocurrent measurements, a decay time τd ~ 2.5 ms at 300 K was measured from the falling edge of the photogenerated waveform after irradiating the device with a stream of incoming ON/OFF white light pulses.

multidisciplinary sciences
Fast response fabricated MoS2-photodiode based thin film

Ahmed Abdelhady A. Khalil,Abdallah M. Karmalawi,Alaaeldin A. Abdelmageed,Hamdan A. S. Al-shamiri,Heba A. Shawkey,Maram T. H. Abou Kana,Mohamed A. Swillam,Hamed M. Kandel

DOI: https://doi.org/10.1007/s10854-024-12204-4

2024-03-12

Journal of Materials Science Materials in Electronics

Abstract:In this study, we present the fabrication and characterization of a thin film based on 1 T-MoS 2 pn photodiode for the purpose of quick response photodetection application. The photodiode was fabricated using RF-sputtering process. The scanning electron microscopy (SEM) and Fourier-transform infrared spectroscopy (FTIR) techniques were employed to investigate the surface topology and structural characteristics of the nanostructured MoS 2 thin film. The electrical properties of the photodiode that was produced were examined by conducting measurements of its current–voltage (I-V) characteristics across a range of bias voltages spanning from − 2 to + 2 V. The external quantum efficiency (EQE) of the pn photodiode that was produced was determined to be as high as 9.8%. Additionally, the internal quantum efficiency (IQE) was found to be as high as 10.5%. Furthermore, a time response of 1.748 ms was observed. The findings of this study illustrate the capability of MoS 2 photodiodes in facilitating rapid response photodetection applications.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Fast Response CdS-CdSxTe1-x-CdTe Core-Shell Nanobelt Photodetector

Mingwei Tang,Pengfei Xu,Zhong Wen,Xing Chen,Chenlei Pang,Xuechu Xu,Chao Meng,Xiaowei Liu,He Tian,Nagarajan Raghavan,Qing Yang

DOI: https://doi.org/10.1016/j.scib.2018.08.003

IF: 18.9

2018-01-01

Science Bulletin

Abstract:Quasi-one-dimensional semiconductor nanostructure-based photodetectors show high sensitivity but suffer from slow response speed due to surface reaction. Here, we report a fast-response CdS-CdSxTe1-x-CdTe core-shell nanobelt photodetector with a rise time of 11 mu s, which is the fastest among CdS based photodetectors reported previously. The improved response speed is ascribed to the suppressed possibilities of surface reaction resulting from the core-shell structure and heterojunction among the CdS, CdSxTe1-x and CdTe. The measured response spectrum of CdS-CdSxTe1-x-CdTe core-shell nanobelt photodetector covers a wide range from 355 to 785 nm. Moreover, high responsivity (1,520 A/W) and large 3 dB bandwidth (similar to 22.9 kHz) are obtained along with the fast response. The high performance in responsivity, sensitivity, spectral response and photoresponse speed makes this device a promising candidate for practical application in optical sensing, communication and imaging. (C) 2018 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved.
An ultrasensitive molybdenum-based double-heterojunction phototransistor

Shun Feng,Chi Liu,Qianbing Zhu,Xin Su,Wangwang Qian,Yun Sun,Chengxu Wang,Bo Li,Maolin Chen,Long Chen,Wei Chen,Lili Zhang,Chao Zhen,Feijiu Wang,Wencai Ren,Lichang Yin,Xiaomu Wang,Hui-Ming Cheng,Dong-Ming Sun

DOI: https://doi.org/10.1038/s41467-021-24397-x

IF: 16.6

2021-01-01

Nature Communications

Abstract:Two-dimensional (2D) materials are promising for next-generation photo detection because of their exceptional properties such as a strong interaction with light, electronic and optical properties that depend on the number of layers, and the ability to form hybrid structures. However, the intrinsic detection ability of 2D material-based photodetectors is low due to their atomic thickness. Photogating is widely used to improve the responsivity of devices, which usually generates large noise current, resulting in limited detectivity. Here, we report a molybdenum-based phototransistor with MoS 2 channel and α-MoO 3-x contact electrodes. The device works in a photo-induced barrier-lowering (PIBL) mechanism and its double heterojunctions between the channel and the electrodes can provide positive feedback to each other. As a result, a detectivity of 9.8 × 10 16 cm Hz 1/2 W −1 has been achieved. The proposed double heterojunction PIBL mechanism adds to the techniques available for the fabrication of 2D material-based phototransistors with an ultrahigh photosensitivity.
Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Jinpeng Huo,Yu Xiao,Tianming Sun,Guisheng Zou,Daozhi Shen,Bin Feng,Luchan Lin,Wengan Wang,Guanlei Zhao,Lei Liu

DOI: https://doi.org/10.1021/acsami.1c12685

2021-11-02

Abstract:2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

materials science, multidisciplinary,nanoscience & nanotechnology
Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (adv. Mater. 42/2015)

Xudong Wang,Peng Wang,Jianlu Wang,Weida Hu,Xiaohao Zhou,Nan Guo,Hai Huang,Shuo Sun,Hong Shen,Tie Lin,Minghua Tang,Lei Liao,Anquan Jiang,Jinglan Sun,Xiangjian Meng,Xiaoshuang Chen,Wei Lu,Junhao Chu

DOI: https://doi.org/10.1002/adma.201570283

IF: 29.4

2015-01-01

Advanced Materials

Abstract:Ultrasensitive and broadband MoS2 photodetectors driven by ferroelectrics are developed by J. Wang, W. Hu, and co-workers on page 6575. A high detectivity (≈2.2 × 1012 Jones), photoresponsitivity (2570 A W−1), and photoresponse wavelength (visible to 1.55 μm) detector is achieved under an ultra-high electrostatic field from ferroelectric polarization.
Highly Sensitive MoS2Photodetector Based on Charge Integration and Field-Coupled Effect

Jianhang Lv

DOI: https://doi.org/10.1109/ted.2022.3217998

IF: 3.1

2022-01-01

IEEE Transactions on Electron Devices

Abstract:In this article, a highly sensitive molybdenum disulfide (MoS2) photodetector based on charge integration and field-coupled effect has been designed and fabricated. The mechanism of field-coupled effect and the photoresponse properties of the devices have been demonstrated and evaluated. Due to the strong absorption and photon-charges integration by deep-depletion region in a lightly doped silicon substrate, the strong field-coupled effect by few-layer MoS2 channel, and the effective carrier collection by monolayer graphene (Gr) electrode, the proposed MoS2-based photodetector exhibits an ultrahigh responsivity of $7.5\times 10^{{4}}$ A/W and achieves a compromise between responsivity and response speed. The deep-depletion effect triggered by pulse gate voltage enables effective manipulation and high linearity. A comparison with Gr channel shows the advantage of MoS2 photodetector in suppressing the reset current and reducing static power consumption to ~0.1 nW. This work provides a new route for improving the performance of TMDs-based photodetectors.
Highly Sensitive MoS2 Photodetector on Polarized Thin-Film Lithium Niobate with Extremely Low Dark Current

Yifan Liu,Haiwei Chen,Yuwei Zhang,Tao Zhou,Jun Zhou,Bei Zhao,Wenhui Wang,Junpeng Lu,Zhenhua Ni,Dongyang Wan

DOI: https://doi.org/10.1142/s0217984924504591

2024-01-01

Modern Physics Letters B

Abstract:To obtain high performance optoelectronic devices, ferroelectric materials have received a lot of attention due to the various emerging effects on channel materials induced by the ferroelectric polarization. In this work, a special photodetector with the channel material of a triple-layer MoS2 on a polarized LiNbO3 substrate was fabricated. The device has a high responsivity of 113.1[Formula: see text]A/W and a high specific detectivity of up to [Formula: see text] Jones under red illumination, while maintaining the rise and fall time of 32 and 22[Formula: see text]ms, respectively. Meanwhile, the dark current of this device can be as low as [Formula: see text][Formula: see text]A with a bias of 5.0[Formula: see text]V because the channel material MoS2 is almost depleted under the internal electrical field induced by the polarized LiNbO3. This work promises a feasible way for the future development of integrated high-sensitivity photodetectors.
Sensitive, Fast, and Stable Photodetector Based on Perovskite/mos2 Hybrid Film

Bo Sun,Shuang Xi,Zhiyong Liu,Xinyue Liu,Ziyi Wang,Xianhua Tan,Tielin Shi,Jianxin Zhou,Guanglan Liao

DOI: https://doi.org/10.1016/j.apsusc.2019.07.036

IF: 6.7

2019-01-01

Applied Surface Science

Abstract:Atomically thin MoS2 film has displayed great potential for future optoelectronics due to its outstanding photonic and electronic properties. However, many important applications, especially for photodetection, are still severely limited by its low light absorption. In this paper, we demonstrate a high-performance photodetector based on perovskite/MoS2 hybrid film, which exhibits sensitive, fast, and stable response under low operation potential. The external photoresponsivity is about 342 A/W at bias potential of 2 V without gate voltage under incident power of 2.2 pW (520 nm), which is superior than most of the photodetectors based on transition metal dichalcogenides and perovskite. The devices show high stability during transient on/off test without any encapsulation, in which the response and recovery time has been recorded as 27 ms and 21 ms, respectively. Besides, the devices can be fabricated on various substrates, including SiO2/Si, transparent glass and flexible PET, etc. The flexible perovskite/MoS2 photodetectors with ultrahigh stability during 20,000 times bending was reported for the first time. We expect the proposed hybrid photodetector would be a competitive candidate in future flexible electronics. Our research also paves the way to integrate various atomically thin films with highly optical absorption materials.
Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.

Jinpeng Huo,Yu Xiao,Tianming Sun,Guisheng Zou,Daozhi Shen,Bin Feng,Luchan Lin,Wengan Wang,Guanlei Zhao,Lei Liu

DOI: https://doi.org/10.1021/acsami.1c12685

IF: 9.5

2021-01-01

ACS Applied Materials & Interfaces

Abstract:2D materials exhibit intriguing electrical and optical properties, making them promising candidates for next-generation nanoelectronic devices. However, the high contact resistance of 2D materials to electrode material often limits the ultimate performance and potential of 2D materials and devices. In this work, we demonstrate a localized femtosecond (fs) laser irradiation process to substantially minimize the resistance of MoS2-metal contacts. A reduction of the contact resistance exceeding three orders of magnitude is achieved for mechanically exfoliated MoS2, which remarkably improves the overall FET performance. The underlying mechanisms of resistance reduction are the removal of organic contamination induced by the transfer process, as well as the lowering of Schottky barrier resistance (RSB) attributed to interface Fermi level pinning (FLP) by Au diffusion, and the lowering of interlayer resistance (Rint) due to interlayer coupling enhancement by Au intercalation under fs laser irradiation. By taking advantage of the improved MoS2-metal contact behavior, a high-performance MoS2 photodetector was developed with a photoresponsivity of 68.8 A W-1 at quite a low Vds of 0.5 V, which is ∼80 times higher than the pristine multilayer photodetector. This contamination-free, site-specific, and universal photonic fabrication technique provides an effective tool for the integration of complex 2D devices, and the mechanism of MoS2-metal interface modification reveals a new pathway to engineer the 2D material-metal interface.

Fast ${\text{mos}_{2}}$ Photodetector with Ultralow Contact Resistance

A fast 2D MoS2 photodetector with ultralow contact resistance

Mos2 Nanosheet Photodetectors With Ultrafast Response

Ultrafast and Highly Sensitive Dual-Channel FET Photodetector Based on a Two-Dimensional MoS2 Homojunction.

Ultrafast Response of Monolayer Molybdenum Disulfide (MoS2) Photodetectors

High Performance Photodetector Based On Pd-Single Layer Mos2 Schottky Junction

Fast and high-responsivity MoS2/MoSe2 heterostructure photodetectors enabled by van der Waals contact interfaces

High Responsivity Photodetector Based on Monolayer Molybdenum Disulfide (MoS 2 )

Ultrasensitive and broadband MoS2 photodetector driven by ferroelectrics

Ultrafast Charge Transfer 2D MoS2/Organic Heterojunction for Sensitive Photodetector

2D MoS2/CuPc heterojunction based highly sensitive photodetectors through ultrafast charge transfer

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS2 Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts

Fast response fabricated MoS2-photodiode based thin film

Fast Response CdS-CdSxTe1-x-CdTe Core-Shell Nanobelt Photodetector

An ultrasensitive molybdenum-based double-heterojunction phototransistor

Femtosecond Laser Irradiation-Mediated MoS 2 –Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors

Photodetectors: Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics (adv. Mater. 42/2015)

Highly Sensitive MoS2Photodetector Based on Charge Integration and Field-Coupled Effect

Highly Sensitive MoS2 Photodetector on Polarized Thin-Film Lithium Niobate with Extremely Low Dark Current

Sensitive, Fast, and Stable Photodetector Based on Perovskite/mos2 Hybrid Film

Femtosecond Laser Irradiation-Mediated MoS2-Metal Contact Engineering for High-Performance Field-Effect Transistors and Photodetectors.