Abstract:Owing to high pixel density and brightness, gallium nitride (GaN) based micro-light-emitting diodes (Micro-LEDs) are considered revolutionary display technology and have important application prospects in the fields of micro-display and virtual display. However, Micro-LEDs with pixel sizes smaller than 10 μm still encounter technical challenges such as sidewall damage and limited light extraction efficiency, resulting in reduced luminous efficiency and severe brightness non-uniformity. Here, we reported high-brightness green Micro-displays with a 5 μm pixel utilizing high-quality GaN-on-Si epilayers. Four-inch wafer-scale uniform green GaN epilayer is first grown on silicon substrate, which possesses a low dislocation density of 5.25 × 108 cm-2, small wafer bowing of 16.7 μm, and high wavelength uniformity (standard deviation STDEV < 1 nm), scalable to 6-inch sizes. Based on the high-quality GaN epilayers, green Micro-LEDs with 5 μm pixel sizes are designed with vertical non-alignment bonding technology. An atomic sidewall passivation method combined with wet treatment successfully addressed the Micro-LED sidewall damages and steadily produced nano-scale surface textures on the pixel top, which unlocked the internal quantum efficiency of the high-quality green GaN-on-Si epi-wafer. Ultra-high brightness exceeding 107 cd/m2 (nits) is thus achieved in the green Micro-LEDs, marking the highest reported results. Furthermore, integration of Micro-LEDs with Si-based CMOS circuits enables the realization of green Micro-LED displays with resolution up to 1080 × 780, realizing high-definition playback of movies and images. This work lays the foundation for the mass production of high-brightness Micro-LED displays on large-size GaN-on-Si epi-wafers.

P‐11.6: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐led with Homoepitaxial Structure

60‐4: Minimal Efficiency Degradation and Elevated Radiometric Power Density of Ultraviolet‐A Micro‐LED with Homoepitaxial Structure

Ultra-low-defect Homoepitaxial Micro-Leds with Enhanced Efficiency and Monochromaticity for High-Ppi AR/MR Displays

Low Dislocation Density Homoepitaxy Ultraviolet-A Micro-LEDs Scale Down to 3 μm

Ultrasmall, Ultracompact and Ultrahigh Efficient InGaN Micro Light Emitting Diodes (μLEDs) with Narrow Spectral Line Width

Recent Advances on GaN-Based Micro-LEDs

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 52.0%@350 mA.

395 Nm GaN-based Near-Ultraviolet Light-Emitting Diodes on Si Substrates with a High Wall-Plug Efficiency of 520%@350 Ma

275 nm Deep Ultraviolet AlGaN-Based Micro-LED Arrays for Ultraviolet Communication

Exploring an InGaN Micro-LED structure for optimum IQE operating on low current condition through simulation study

Growth and Characterization of Micro-LED Based on GaN Substrate

Aging Characteristics of Blue InGaN Micro-Light Emitting Diodes at an Extremely High Current Density of 3.5 Ka Cm−2

Optimized InGaN/GaN Quantum Structure for High-Efficiency Micro-LEDs Displays With Low Current Injection

3.2: Elevating the Light Output Power Density of Scaling‐down AlGaN Ultraviolet‐C Micro‐LED

AlGaN-based Deep Ultraviolet Micro-Led Emitting at 275 Nm.

High-brightness InGaN-based Red Microleds Exceeding 1 Mw/mm2

630-Nm Red InGaN Micro-Light-emitting Diodes (<20 Μm × 20 Μm) Exceeding 1 Mw/mm2 for Full-Color Micro-Displays

Enhancing the optical and electrical properties of AlGaN ultraviolet-C micro-LED via a hybrid scheme of plasma and chemical treatment

Uv Light-Emitting Diodes at 340 Nm Fabricated on A Bulk Gan Substrate

Ultra-high brightness Micro-LEDs with wafer-scale uniform GaN-on-silicon epilayers