Abstract:As the most basic interconnection metallic material, copper (Cu) has been widely used in giant-large scale integrated circuits (GLSI). Corrosion inhibitors always play a crucial role in the Cu chemical mechanical polishing (CMP) process. The passivation of hydrogen peroxide (H2O2) alone is too weak to adequately protect against chemical corrosion on the surface of Cu film, thus, it is necessary to add corrosion inhibitors to the slurry. As a representative corrosion inhibitor, 1, 2, 4-triazole was compared with a novel corrosion inhibitor known as TT-LYK (ethanol, 2, 2′-[[(methyl-1H-benzotriazol-1-yl) methyl] imino] bis-), and their mixed inhibitor was studied in this paper. Different analytical methods such as the potentiodynamic polarization test, physical appearance phenomenon analysis, contact angle measurement and dynamic polishing experiment were used to compare their inhibition properties, and the fitting of different adsorption isotherms and static erosion tests were used to clarify the adsorption types and passivation processes respectively. The results indicated that both TT-LYK and 1, 2, 4-triazole achieved the goal of inhibiting Cu surface corrosion, but the inhibition effect of TT-LYK was slightly weaker at the same mass fraction. The corrosion protection of the two inhibitors is mainly attributable to the presence of organic inhibitor molecules on the surface of Cu by chemisorption and physisorption simultaneously. The passivation processes of both can be divided into two steps. First, the direct growth of the Cu-inhibitor passivation film occurs, followed by the redeposition of the Cu-inhibitor complex. From the results of electrochemical experiments, it can be concluded that the structure of the thin passivation film growing on the Cu surface varies with the inhibitor, and the composition of the passivation film was investigated by XPS and Raman spectrum analysis. At the same time, the surface roughness after polishing was found to decrease with the increase in inhibition effect of the inhibitors. According to the inhibition characteristics of these two inhibitors, a mixed corrosion inhibitor (TT-LYK and 1, 2, 4-triazole) was proposed in this study. Under the synergistic inhibition action, better inhibition effect and surface quality for Cu CMP were obtained. This outcome may be ascribed to the variation in the structure and density of the passivation film.

Experimental and Theoretical Computational Study of Corrosion Inhibitors in the Cobalt Bulk Chemical Mechanical Polishing (CMP) Process

Experimental and Density Functional Theory Study of Inhibitors on Cobalt Corrosion for Chemical Mechanical Planarization Process

Electrochemical Corrosion Behavior and Theoretical Simulation of Cobalt in Chemical Mechanical Polishing Process

Characterization of 1, 2, 4-Triazole as Corrosion Inhibitor for Chemical Mechanical Polishing of Cobalt in H2O2 Based Acid Slurry

The Role of Dipotassium Ethylenediaminetetraacetic Acid and Potassium Oleate on Chemical Mechanical Planarization Relevant to Heterogeneous Materials of Cobalt Interconnects

Ruthenium and Copper CMP in periodate-based slurry with BTA and K2MoO4 as compound corrosion inhibitors

Roles of Phthalic Acid and Oleic Acid on Chemical Mechanical Polishing in Alkaline Slurries for Cobalt Interconnects

Effect of Corrosion Inhibitor and Non-ionic Surfactant on CMP of Cu/Co Barrier Stack

Slurry System Establishment and Optimization for Advanced Cobalt Interconnect Metallization

Selection and Optimization of Corrosion Inhibitors for Improved Cu CMP and Post-Cu CMP Cleaning

Study on the film forming mechanism, corrosion inhibition effect and synergistic action of two different inhibitors on copper surface chemical mechanical polishing for GLSI

Tribocorrosion Study of Copper During Chemical Mechanical Polishing in Potassium Periodate-Based Slurry

The Effect of H2O2 and 2-MT on the Chemical Mechanical Polishing of Cobalt Adhesion Layer in Acid Slurry

The effect of glycine and benzotriazole on corrosion and polishing properties of cobalt in acid slurry

Research on Weakly Alkaline Bulk Slurries Relevant to Chemical Mechanical Polishing for Cobalt Interconnects

Polishing mechanisms of various surfactants in chemical mechanical polishing relevant to cobalt interconnects

Galvanic Corrosion Inhibitors for Cu/Ru Couple During Chemical Mechanical Polishing of Ru

Effect of Potassium Tartrate on Removal Rate Selectivity of Co/TiN/TEOS for Cobalt “Buff Step” Chemical Mechanical Planarization

Effects of KIO 4 concentration and pH values of the solution relevant for chemical mechanical polishing of ruthenium

Experimental and Computational Investigation of Complexing Agents on Copper Dissolution for Chemical Mechanical Polishing Process

Experimental and Computational Investigation of Salicylhydroxamic Acid as a Corrosion Inhibitor for Copper in Alkaline Solutions