Geometric and Electronic Structures of Monolayer Potassium Fullerides on Si(111)-√3×√3-Ag

Wenxuan Zhang,Jinyue Wang,Zhan Wang,Zhukun Fang,Haopeng Yin,Dan-Dan Guan,Shiyong Wang,Hao Zheng,Yao-Yi Li,Canhua Liu,Jin-Feng Jia
DOI: https://doi.org/10.1016/j.apsusc.2024.161371
IF: 6.7
2025-01-01
Applied Surface Science
Abstract:Metal-terminated silicon surfaces are a specific class of templates for growth of fulleride ultrathin films. Using scanning tunneling microscope and spectroscope, we investigate the geometric and electronic structures of KxC60 monolayers on Si(111)-root 3x root 3-Ag with x gradually increased to 2. Besides long-range ordered KC60 and K2C60 monolayers, a fraction-stoichiometric fulleride, K4/3C60 monolayer, is newly discovered. All these fulleride monolayers open an energy gap at the Fermi level owing to electronic correlations and Jahn-Teller distortion. The gap of the even-stoichiometric fulleride, K2C60, is prominently softened by partial electron doping from the Si(111)-root 3x root 3-Ag surface.
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