Abstract:Modification by ultra-thin fullerene (C-60) insertion layer of about 1 monolayer on the electronic structure and the film growth of 2,7-diocty[1]benzothieno-[3,2-b] benzothiophene (C8-BTBT) on silicon oxide (SiO2) is investigated using ultraviolet photoelectron spectroscopy (UPS), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and X-ray diffraction (XRD). It is found that the ultra-thin C-60 insertion layer doesn't induce an ambipolar charge transport characteristic but it indeed lifts up the energy levels of C8-BTBT, resulting in p-doping and hole accumulation at the semiconductor-dielectric interface. The charge transfer from trap states residing in the band gap of C8-BTBT to the lowest unoccupied molecular orbital (LUMO) of C-60 most likely leads to a decrease of threshold voltage for corresponding organic field effect transistors (OFETs) based on such a configuration. Band bending and decrease of the ionization potential (IP) are observed in the C8-BTBT film attributed to the increasing ordering of molecular orientation with the deposition of C8-BTBT. The HOMO downward shift is clearly bigger with the C-60 insertion layer than that without. A typical Volmer-Weber (VW) growth mode is detected due to the weaker van der Waals interaction between C8-BTBT and the underlying layer of C-60/C8-BTBT than that between the C8-BTBT molecules. Compared to without C-60 interlayer, the molecular packing is a little more disordered at low coverages, resulting in more C8-BTBT molecules to lean away from the interface normal. The C8-BTBT film in such a structure phase has the HOMO closer to the E-F than that at an almost perfectly vertically standing up configuration. Our results show that the introduction of C-60 insertion layer lifts up the HOMO of C8-BTBT and improves the energy level alignment at the interface.

Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(0 0 1) surface

Equilibrium configurations and electronic structure of fullerene ultrathin films on SrTiO3(001) surface

Equilibrium configurations and electronic structure of Fullerene ultrathin films on SrTiO 3 (001) surface

Self-assembly and ordering of C 60 on the WO 2 /W(110) surface

Self-assembly of C60 Monolayer on Epitaxially Grown, Nanostructured Graphene on Ru(0001) Surface

Self-assembly and ordering of C<sub>60</sub> on the WO<sub>2</sub>/W(110) surface

Visualizing Molecular Orientational Ordering and Electronic Structure in CsnC60 thin films

Visualizing Molecular Orientational Ordering and Electronic Structure in CsnC60 Fulleride Films

Fullerene (C-60) Interlayer Modification on the Electronic Structure and the Film Growth of 2,7-Diocty[1]benzothieno-[3,2-b]benzothiophene on Sio2

Strain-Relief Patterns and Kagome Lattice in Self-Assembled C60 Thin Films Grown on Cd(0001)

Fullerene-derivative PC 61 BM Forms Three Types of Phase-Pure Monolayer on the Surface of Au(111)

Surface Science - Topology Of Two-Dimensional C-60 Domains

Scanning Tunneling Microscopy Of Endohedral Metallofullerene Tb@C-82 On C-60 Film And Si(100) 2 X 1 Surface

Observation Of The Development Of The Electronic-Structure Of C(60) Films From Submonolayer Coverage To 2 And 3 Dimensionality

Nanoscale Structural Characteristics and Electron Field Emission Properties of Transition Metal–fullerene Compound TiC60 Films

Scanning Tunneling Microscopy Studies of Fullerenes

Synthesis of a monolayer fullerene network

Tuning Fulleride Electronic Structure and Molecular Ordering Via Variable Layer Index.

Geometric and Electronic Structures of Monolayer Potassium Fullerides on Si(111)-√3×√3-Ag

Stability and Strength of Monolayer Polymeric C 60

Scanning Tunneling Microscopy Investigation of Substrate-Dependent Adsorption and Assembly of Metallofullerene Gd@C82 on Cu(111) and Cu(100)