Abstract:GaN-based micro-light-emitting diodes (micro-LEDs) are critical for lighting and display applications due to their high efficiency and stability. However, it has been a challenge to alleviate the reduction of the external quantum effect (EQE) of micro-LEDs with a decreasing size. This is attributed to an increase in the Shockley-Read-Hall (SRH) nonradiative recombination rate of the sidewall. Due to the size effects, it is more difficult to prepare efficient micro-LEDs with decreasing mesa size. In this work, micro-LED epi-wafers with InGaN quantum dots (QDs) as active layer materials were grown by plasma-assisted molecular beam epitaxy (PA-MBE), and full-M-sided hexagonal structure micro-LEDs were prepared. We fabricated the micro-LED array with the full-M-sided hexagonal structure and repaired etching damage on the sidewall by chemically treating with a tetramethylammonium hydroxide (TMAH) solution. Most of the surface defects caused by etching were eliminated, and the etching damage can be further reduced by using QDs as an active region. Thus, the efficiency of the micro-LED at a low injection current density is improved, and the size effect is eventually overcome. Compared with the 20 mu m micro-LED array, the peak EQE of the 10 mu m micro-LED array was improved by 79%, reaching 0.83% at 11 A/cm(2). We demonstrate that constructing full-M-sided structures can overcome the size effect in InGaN QD-based micro-LEDs. Notably, the cyan-green micro-LEDs fabricated by this method exhibited low efficiency drop. In addition, the QD-based micro-LED exhibits excellent wavelength stability with increasing injection current density. This work provides a new way to fabricate high-efficiency micro-LEDs.

Impacts and Effectiveness of Sidewall Treatment on the Spatially Resolved Optical Properties and Efficiency Enhancement for GaN-based Blue and Green Micro-Leds

Comparative Analysis of Microstructure, Electrical and Optical Performance in Sidewall Etching Process for GaN-Based Green Micro-LED

Microstructure characterization and sidewall treatment of GaN/InGaN micro-light-emitting diodes

Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs

Improved Optical and Electrical Characteristics of GaN-Based Micro-LEDs by Optimized Sidewall Passivation

External quantum efficiency enhancement of GaN-based blue LEDs by treating their full-M-sided hexagonal mesa with TMAH solution

Improvement in Quantum Efficiency of Green GaN-based Micro-Led by Trapezoidal Quantum Well

Optical and microstructural characterization of Micro-LED with sidewall treatment

Size-dependent sidewall defect effect of GaN blue micro-LEDs by photoluminescence and fluorescence lifetime imaging

External Quantum Efficiency Enhancement of InGaN-Based Quantum Dot Green Micro-Light-Emitting Diode Arrays by Fabricating Full-A-Sided Triangular Mesa

Significant reduction in sidewall damage related external quantum efficiency (EQE) drop in red InGaN microLEDs (∼625 nm at 1 A cm−2) with device sizes down to 3 μm

Elimination of Size Effects in InGaN Quantum Dot Cyan-Green Micro-LEDs by Constructing a Full-m-Plane Hexagonal Structure

Increasing Efficiency and Extending Lifetime of Red Micro Light-Emitting Diodes Through Sidewall Treatment for Improved Reliability

P‐156: Efficiency Improvement Mechanism Analysis of Sidewall Passivation GaN based Micro‐LEDs by Atomic Layer Deposition

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy

Investigation of GaN-Based Micro-LEDs with Effective Tetramethylammonium Hydroxide Treatment

Optimizing InGaN Micro-LED Efficiency: Investigating the Internal Quantum Efficiency and Ideality Factor Connection

Improved Performance of AlGaInP Red Micro Light-Emitting Diodes by Sidewall Treatments of Citric Acid

Performance improvement of red, green and blue InGaN micro-LEDs with distributed Bragg reflector

High-Efficiency Vertical-Chip Micro-Light-Emitting Diodes via p-GaN Optimization and Surface Passivation

P‐10.7: Investigation of Fabrication Technologies of GaN‐based Micro‐LED Devices