Abstract:High-speed operation and low-power-consumption requirements have accelerated the development of thin-film transistors (TFTs) with exploration of gate dielectrics. In this work, the integration of all-sputtering-derived HfGdO high-k gate dielectrics with amorphous InGaZnO (a-InGaZnO) films has been reported, yielding significant improvements in the performance of a-InGaZnO TFTs. By adjusting the multilayer dielectric sequence, TFT device performance can be precisely manipulated. It has been detected that a-InGaZnO TFTs with an optimized Al2O3/HfGdO dielectric configuration have demonstrated superior electrical performance, including a high field-effect mobility (μFE) of 23.3 cm2·V–1·S–1, a large on/off current ratio of 1.2 × 107, a low subthreshold swing of 0.09 V/dec, and good stability under bias stress. Finally, a low-voltage-operated resistor-loaded unipolar inverter has been assembled on the base of Al2O3/HfGdO/a-InGaZnO TFTs, demonstrating full swing characteristics and high gain of ∼20. All of the experimental results indicate promising potentials for all-sputtering-derived Al2O3/HfGdO laminated dielectrics toward the achievement of low-cost, low-power-consumption, and large-area all-oxide optoelectronics.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acsaelm.0c00763?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acsaelm.0c00763</a>.O 1s XPS spectra of the HGO film deposited at various oxygen partial pressure ratios; content percentages of O I, O II, and O III in HGO films deposited at various oxygen partial pressure ratios; leakage current curves of HGO films at various oxygen partial pressure ratios and annealing temperatures; X-ray diffraction (XRD) patterns of HGO films annealed at different temperatures; output and transfer characteristics of α-IGZO TFTs with different gate dielectrics; capacitance density vs. frequency curves of HA, AH, AHA, and Al2O3; output and transfer characteristics of α-IGZO/AH TFTs with different Al2O3 passivation-layer thicknesses; capacitance density vs. frequency curves of AH-3 nm, AH-6 nm, and AH-11 nm; characteristic parameters of the resistor-loaded inverter prepared by AH-6 nm TFT at different VDD (<a class="ext-link" href="/doi/suppl/10.1021/acsaelm.0c00763/suppl_file/el0c00763_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.

Sputtered AlOx Interlayer for Improving Performance of A-Ingazno TFTs: A Study on Hydrogen Diffusion Mitigation and Electron Modulation

High-Performance A-Ingazno Thin-Film Transistors with Extremely Low Thermal Budget by Using a Hydrogen-Rich Al2O3 Dielectric

Mobility and Stability Enhancement of Amorphous In-Ga-Zn-O TFTs with Atomic Layer Deposited Al2O3/SiO2Stacked Insulators

High-Performance Unannealed A-Ingazno Tft with an Atomic-Layer-Deposited Sio2 Insulator

Balanced Performance Improvement of a-InGaZnO Thin-Film Transistors Using ALD-Derived Al 2 O 3 -Passivated High-k HfGdO x Dielectrics

A dual function metal oxide interlayer as an oxygen-defect inhibitor and a gate-leakage suppressor for a hysteresis-free, solution-processed top-gated IGZO TFT

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al₂O₃ Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al2O3 Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Improvement of Amorphous InGaZnO Thin-Film Transistor Reliability and Electrical Performance Using ALD SiO2 Interfacial Layer on PECVD SiO2 Gate Insulator

High-Performance of InGaZnO TFTs With an Ultrathin 5-nm Al<sub>2</sub>O<sub>3</sub> Gate Dielectric Enabled by a Novel Atomic Layer Deposition Method

Comparative Study of Atomic Layer Deposited Indium-Based Oxide Transistors with a Fermi Energy Level-Engineered Heterojunction Structure Channel through a Cation Combinatorial Approach

High-Performance Amorphous InGaZnO Thin-Film Transistor Gated by HfAlOₓ Dielectric with Ultralow Subthreshold Swing

High-performance IGZO-based TFTs with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

The improved properties of solution-based InGaSnO (IGTO) thin film transistor using the modification of InZnO (IZO) layer

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Evolution of Enhanced Performance of a-IGZO TFTs With Cu/Al-Based Contacts

Synergistically Enhanced Performance and Reliability of Abrupt Metal‐Oxide Heterojunction Transistor

High-Performance Indium-Gallium-Zinc-Oxide Thin-Film Transistors with Stacked Al<sub>2</sub>O<sub>3</sub>/HfO<sub>2</sub> Dielectrics

Compact Integration of Hydrogen–Resistant a–InGaZnO and Poly–Si Thin–Film Transistors

Enhanced Bias Stress Stability of A-Ingazno Thin Film Transistors by Inserting an Ultra-Thin Interfacial InGaZnO:N Layer

Tri‐Layer Heterostructure Channel of a‐IGZO/a‐ITZO/a‐IGZO Toward Enhancement of Transport and Reliability in Amorphous Oxide Semiconductor Thin Film Transistors