Abstract:The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among all the known monolayer transition-metal dichalcogenides (TMDs). To obtain the large-area monolayer TMDs' crystal is the first step to manufacture scalable and high-performance electronic devices. In this letter, we have successfully fabricated millimeter-sized monolayer WSe2 single crystals with very high quality, based on our improved mechanical exfoliation method. With such superior samples, using standard high resolution angle-resolved photoemission spectroscopy, we did comprehensive electronic band structure measurements on our monolayer WSe2. The overall band features point it to be a 1.2eV direct band gap semiconductor. Its spin-splitting of the valence band at K point is found as 460 meV, which is 30 meV less than the corresponding band splitting in its bulk counterpart. The effective hole masses of valence bands are determined as 2.344 me at Gamma, and 0.529 me as well as 0.532 me at K for the upper and lower branch of splitting bands, respectively. And screening effect from substrate is shown to substantially impact on the electronic properties. Our results provide important insights into band structure engineering in monolayer TMDs. Our monolayer WSe2 crystals may constitute a valuable device platform.

Valley Landau Level Crossings in Weakly Coupled Bilayer WSe2

Interlayer couplings, Moiré patterns, and 2D electronic superlattices in MoS2/WSe2 hetero-bilayers.

Multifarious Interfaces, Band Alignments, and Formation Asymmetry of WSe2-MoSe2 Heterojunction Grown by Molecular-Beam Epitaxy.

Valley-spin polarized Landau levels in a monolayer semiconductor

Bilayer WSe2 as a natural platform for interlayer exciton condensates in the strong coupling limit

Anomalous Landau level gaps near magnetic transitions in monolayer WSe$_2$

Large valley splitting and vacancy-induced valley polarization in two-dimensional WSeNH

Odd- and even-denominator fractional quantum Hall states in monolayer WSe$_2$

Many-body exciton and inter-valley correlations in heavily electron-doped WSe$_2$ monolayers

Magic continuum in twisted bilayer WSe2

Excitonic density wave and spin-valley superfluid in bilayer transition metal dichalcogenide

Optical Signature of Symmetry Variations and Spin-Valley Coupling in Atomically Thin Tungsten Dichalcogenides

Observation of Intervalley Quantum Interference in Epitaxial Monolayer Tungsten Diselenide.

Fractional quantum Hall effect in valley-layer locked Landau levels in bilayer MoS$_{2}$

Strain-induced Enhanced Interlayer Coupling, Landau Quantizations, and Valley Polarization in Twisted Graphene Bilayer

Imaging field-tuned quantum Hall broken-symmetry orders and quantum Hall conducting channel in charge-neutral graphene WSe2 heterostructure

A tunable bilayer Hubbard model in twisted WSe2

Tunable Valley Pseudospin and Electron-Phonon Coupling in WSe 2 /1T-VSe 2 Heterostructures

Electronic Structure of Exfoliated Millimeter-Sized Monolayer WSe2 on Silicon Wafer

Stacking-dependent exciton multiplicity in WSe$_2$ bilayers

Tunable valley characteristics of WSe2 and WSe2/VSe2 heterostructure