Abstract:Monolayer (ML) semiconducting transition-metal dichalcogenides (TMDs) represent a unique class of two-dimensional (2D) electron systems. Their atomically thin structure -- just like graphene -- facilitates gate-tunability, while the sizable band gap and strong spin-orbit coupling hold promise for properties beyond graphene. Measurements under large magnetic fields have revealed an unusual LL structure, distinct from other 2D electron systems. However, owing to limited sample quality and poor electrical contact, probing the lowest Landau levels (LLs) has been challenging, and observation of electron correlations within the fractionally filled LLs regime has not been possible. Here, through bulk electronic compressibility measurements, we investigate the LL structure of ML WSe$_2$ in the extreme quantum limit, and observe fractional quantum Hall (FQH) states in the lowest three LLs. The odd-denominator FQH sequences demonstrate a systematic evolution with the LL orbital index, which has not been observed in any other system but is consistent with generic theoretical expectations. In addition, we observe an even-denominator state in the second LL that is expected to host non-Abelian statistics. Our results suggest that the 2D semiconductors can provide an experimental platform that closely resembles idealized theoretical models in the quantum Hall regime.

What problem does this paper attempt to address?

This paper aims to explore single - layer transition metal dichalcogenides (TMDs), especially the fractional quantum Hall effect (FQH) in single - layer WSe₂. Specifically, through electron compressibility measurements, the researchers explored the Landau level structure of single - layer WSe₂ in the extreme quantum limit and observed the fractional quantum Hall states in the lowest three Landau levels. Among these states, the FQH sequences with odd denominators show a systematic evolution related to the Landau level orbital index, a phenomenon not observed in other systems. In addition, the study also found that there is a state with an even denominator in the second Landau level, which may support non - Abelian statistical properties. The key contributions of the paper are: 1. **Observation of FQH states in the lowest three Landau levels**: This includes the 1/3 filling factor state observed in the lowest Landau level, as well as the 1/5 and 1/7 filling factor states observed in higher Landau levels. 2. **Systematic evolution of FQH states with odd denominators**: As the Landau level orbital index increases, the FQH states with odd denominators show systematic changes, which are consistent with theoretical expectations but have not been observed in other systems. 3. **Discovery of a state with an even denominator**: An even - denominator state with a 3/2 filling factor was observed in the second Landau level. This state may support non - Abelian statistical properties, which is an important finding in the study. 4. **Superiority of the experimental system**: As a two - dimensional semiconductor material, single - layer WSe₂ has high sample quality and good electrical contacts, making it possible to observe FQH states in the lower - density region, which is more difficult in other systems. Overall, this study not only provides new insights into the FQH states in single - layer WSe₂ but also provides an ideal experimental platform for further exploration of related electronic states.

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