Abstract:The doping of graphene to tune its electronic properties is essential for its further use in carbon-based electronics. Adapting strategies from classical silicon-based semiconductor technology, we use the incorporation of heteroatoms in the 2D graphene network as a straightforward way to achieve this goal. Here, we report on the synthesis of boron-doped graphene on Ni(111) in a chemical vapor deposition process of triethylborane on the one hand and by segregation of boron from the bulk of the substrate crystal on the other hand. The chemical environment of boron was determined by x-ray photoelectron spectroscopy, and angle-resolved photoelectron spectroscopy was used to analyze the impact on the band structure. Doping with boron leads to a shift of the graphene bands to lower binding energies. The shift depends on the doping concentration and for a doping level of 0.3 ML a shift of up to 1.2 eV is observed. The experimental results are in agreement with density-functional calculations. Furthermore, our calculations suggest that doping with boron leads to graphene preferentially adsorbed in the top-fcc geometry, since the boron atoms in the graphene lattice are then adsorbed at substrate fcc-hollow sites. The smaller distance of boron atoms incorporated into graphene compared to graphene carbon atoms leads to a bending of the doped graphene sheet in the vicinity of the boron atoms. By comparing calculations of doped and undoped graphene on Ni(111), as well as the respective freestanding cases, we are able to distinguish between the effects that doping and adsorption have on the band structure of graphene. Both doping and bonding to the surface result in opposing shifts on the graphene bands.

Location Preference of Boron and Nitrogen Dopants at Graphene/copper Interface

Tuneable Resonance Properties of Graphene by Nitrogen-Dopant

Resonance of Graphene Nanoribbons Doped with Nitrogen and Boron: a Molecular Dynamics Study

Atomic Resolution of Nitrogen-Doped Graphene on Cu Foils.

Effects of Vacancies and Nitrogen Dopants on Interfacial Bonding and Electronic Structure of Graphene/Metal Composites

Nitrogen-Doped Graphene on Copper: Edge-Guided Doping Process and Doping-Induced Variation of Local Work Function

Graphene on a metal surface with an h-BN buffer layer: gap opening and N-doping

Influence of B doping and N doping on structure and electronic properties of graphene

Nitrogen-induced Local Spin Polarization in Graphene on Cobalt

Vacant defect and nitrogen doping effects on the interface of graphene/Cu composites: Computational and experimental evaluation

Stability of boron-doped graphene/copper interface: DFT, XPS and OSEE studies

A Kinetic Pathway Toward High-Density Ordered N Doping of Epitaxial Graphene on Cu(111) Using C5NCl5 Precursors.

Interstitial Boron Doping Effects on the Electronic and Magnetic Properties of Graphitic Carbon Nitride Materials

Growth and electronic structure of boron-doped graphene

Atomically Well-defined Nitrogen Doping in the Cross-plane Transport through Graphene Heterojunctions

Regulation of Electronic Structure of Graphene Nanoribbon by Tuning Long-Range Dopant-Dopant Coupling at Distance of Tens of Nanometers

Nitrogen and Boron Doped Monolayer Graphene by Chemical Vapor Deposition Using Polystyrene, Urea and Boric Acid

Synthesis, Structure and Properties of Boron and Nitrogen Doped Graphene

Electrostatic doping of graphene through ultrathin hexagonal boron nitride films

Boron and nitrogen doping in graphene antidot lattices

Possible N/P-Type Conductivity of Two-Dimensional Graphene Oxide by Boron and Nitrogen Doping: Evaluated Via Constrained Excitation