Effects of Vacancies and Nitrogen Dopants on Interfacial Bonding and Electronic Structure of Graphene/Metal Composites

Qian Jia,Boan Zhong,Sijie Wang,Zhenming Yue,Yue Liu,Xi Wang
DOI: https://doi.org/10.1002/pssr.202400165
2024-10-03
physica status solidi (RRL) - Rapid Research Letters
Abstract:The presence of vacancies and nitrogen dopants facilitates the formation of the graphene/copper interface. Both vacancies and nitrogen dopants induce the Fermi level shifts and broaden the bandgap. The enhancement of electronic properties is more pronounced when vacancies and nitrogen dopants are at a certain distance apart, as compared to when they form N configurations. The vacancies and nitrogen dopants significantly alter the interfacial bonding and electrical properties at the graphene/metal interface. The graphene/copper system, characterized by coherent and immiscible interfaces, serves as a suitable benchmark to elucidate the intrinsic interactions between carbon and metal atoms. Herein, the individual effects of vacancies and nitrogen dopants, as well as their combined effects, are systematically investigated. The bonding energies show that the interfacial bonding is the strongest at the monovacancy (MV) graphene/copper interface, indicating that the introduction of nitrogen in defective graphene/copper interfaces weakens the interfacial bonding. Furthermore, the band structures indicate that both vacancies and nitrogen dopants contribute to the formation of a bandgap. Among them, both MV and graphitic nitrogen doping significantly enhance interfacial bonding while maintaining relatively intact interfacial and band structures.
physics, condensed matter, applied,materials science, multidisciplinary
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