Søren J. Brun,Vitor M. Pereira,Thomas G. Pedersen
Abstract:Bottom-up fabrication of graphene antidot lattices (GALs) has previously yielded atomically precise structures with sub-nanometer periodicity. Focusing on this type of experimentally realized GAL, we perform density functional theory calculations on the pristine structure as well as GALs with edge carbon atoms substituted with boron or nitrogen. We show that p- and n-type doping levels emerge with activation energies that depend on the level of hydrogenation at the impurity. Furthermore, a tight-binding parameterization together with a Green's function method are used to describe more dilute doping.
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to study the effects of boron and nitrogen doping on the electronic structure and semiconductor properties by introducing boron and nitrogen doping in the graphene antidot lattice (GAL). Specifically, the author hopes to reveal the following points through theoretical calculations:
1. **Effect of doping on the band gap**: It has been experimentally proven that by changing the structure of graphene (such as forming nanoribbons or antidot lattices), the band gap can be opened, making it a semiconductor. However, how to further regulate these band gaps through doping, especially for atomically precise bottom - up synthesized GAL, has not been studied in detail yet.
2. **Doping level and activation energy**: Study boron and nitrogen doping under different degrees of hydrogenation, explore how they affect p - type and n - type doping levels, and determine the activation energy of doping atoms. This is crucial for understanding the behavior of dopants in GAL and their applications as semiconductor devices.
3. **Effect of dilute doping**: In addition to fully ordered doping, more sparse doping situations are also studied to understand the effect of doping concentration on the electronic structure. This helps to evaluate different doping density situations that may be encountered in practical applications.
4. **Verification of theoretical models**: Through the combination of density functional theory (DFT) and tight - binding (TB) models with the Green's function method, verify the effects of these dopings on the electronic properties of GAL and provide guidance for future experimental and theoretical research.
### Research background
Since its discovery, graphene has attracted wide attention due to its excellent electrical, optical, and mechanical properties. However, one of the main drawbacks of graphene is the absence of a band gap, which limits its application in devices such as field - effect transistors. To overcome this problem, researchers have attempted to introduce a band gap through various methods, such as forming nanoribbons (GNRs), two - dimensional periodic modification (such as hydrogen adsorption), and forming antidot lattices (GAL). Although these methods have made certain progress experimentally, there are still some problems, such as scattering effects caused by edge defects and unstable band gaps.
### Research methods
The author used density functional theory (DFT) to calculate the electronic structures of pristine GAL and doped GAL, and studied the situation of dilute doping through the tight - binding model and the Green's function method. The specific steps include:
- **Constructing the doping system**: Construct the doping system with modified CHP molecules, replacing an internal carbon atom with boron or nitrogen.
- **DFT calculation**: Calculate the energy band structures of the original and doped systems, and determine the doping level and band - gap changes.
- **TB parameterization**: Fit the DFT results through the TB model to study the effect of doping on the electronic structure.
- **Green's function method**: Used to calculate the activation energy of isolated dopants and evaluate the doping level.
### Main results
- **Boron doping**: Introduce acceptor energy levels, and as the degree of hydrogenation increases, this energy level gradually approaches the conduction band.
- **Nitrogen doping**: Introduce donor energy levels, and as the degree of hydrogenation increases, this energy level gradually approaches the valence band.
- **Activation energy**: Calculate the activation energy in different doping situations through the Green's function method, verifying the validity of the theoretical model.
### Conclusion
This study systematically explored the effects of boron and nitrogen doping on the electronic properties of GAL for the first time, providing an important theoretical basis and laying the foundation for further research on the electronic and transport properties of doped GAL.