Abstract:The combination of grating-based frequency-selective optical feedback mechanisms, such as distributed feedback (DFB) or distributed Bragg reflector (DBR) structures, with quantum dot (QD) gain materials is a main approach towards ultra-high-performance semiconductor lasers for many key novel applications, either as stand-alone sources or as on-chip sources in photonic integrated circuits. However, the fabrication of conventional buried Bragg grating structures on GaAs, GaAs/Si, GaSb and other material platforms have been met with major material regrowth difficulties. We report a novel and universal approach of introducing laterally coupled dielectric Bragg gratings to semiconductor lasers that allows highly controllable, reliable and strong coupling between the grating and the optical mode. We implement such a grating structure in a low-loss amorphous silicon material alongside GaAs lasers with InAs/GaAs QD gain layers. The resulting DFB laser arrays emit at pre-designed 0.8 THz LWDM frequency intervals in the 1300 nm band with record performance parameters, including side mode suppression ratios as high as 52.7 dB, continuous-wave output power of 27.7 mW (room-temperature) and 10 mW (at 70°C), and ultra-low relative intensity noise (RIN) of < -165 dB/Hz (2.5-25 GHz). The devices are also capable of operating isolator-free under very high external reflection levels of up to -12.3 dB whilst maintaining the high spectral and ultra-low RIN qualities. These results validate the novel laterally coupled dielectric grating as a technologically superior and potentially cost-effective approach for fabricating DFB and DBR lasers free of their semiconductor material constraints, thus universally applicable across different material platforms and wavelength bands.

A Compound Cavity Distributed Feedback Laser with Bandwidth over 50 GHz Based on Uniform Gratings

200 Gb/s Optical-Amplifier-Free IM/DD Transmissions Using a Directly Modulated O-Band DFB+R Laser Targeting LR Applications

Integrated Dual-DFB Laser for 408 GHz Carrier Generation Enabling 131 Gbit/s Wireless Transmission over 10.7 Meters.

High Baudrate Short-Reach Communication.

200 Gb/s Unamplified IM/DD Transmission over 20-km SMF with an O-band Low-Chirp Directly Modulated Laser

Travelling wave analysis on high-speed performance of Q-modulated distributed feedback laser.

10Gb/s Direct Modulation of Widely Tunable V-Cavity-Laser with Chirp Managed Laser Technology

Electro-absorption Modulated 53 Gbps Widely Tunable Laser Based on Half-Wave V-coupled Cavities

Transmission Distance Extension of Directly Modulated Tunable V-cavity Laser Using AWG Wavelength Detuning

4*10 Gbps WDM Communication System Based on a Tunable V-cavity Semiconductor Laser.

Direct Modulation of Widely Tunable V-Cavity-Laser for Low-Cost WDM Access Networks

Gain-coupled 770 Nm DFB Semiconductor Laser Based on Surface Grating

High power GaSb-based distributed feedback laser with laterally coupled dielectric gratings at 1.95μm

Study of Gain-Coupled Distributed Feedback Laser Based on High Order Surface Gain-Coupled Gratings

High-speed (10-40 Gb/s) Electroabsorption Modulator Integrated Devices for Fiber Communications

Up to 50 Gb/s modulation of an EAM integrated widely tunable DBR laser

Distributed feedback fiber laser based on a fiber Bragg grating inscribed using the femtosecond point-by-point technique

High performance distributed feedback quantum dot lasers with laterally coupled dielectric grating

2.5Gb/s 1.55 μm InGaAsP/InP DFB laser/electroabsorption modulator integrated device

Single-channel 106.25 Gb/s PAM-4 and 64 Gb/s NRZ transmission with a 33.4-GHz 850-nm VCSEL with low-RIN characteristics