4×15 Gbit/s 850 Nm Vertical Cavity Surface Emitting Laser Array
Lu Zhaochen,Wang Qing,Yao Shun,Zhou Guangzheng,Yu Hongyan,Li Ying,Lang Luguang,Lan Tian,Zhang Wenjia,Liang Chenyu,Zhang Yang,Zhao Fengchun,Jia Haifeng,Wang Guanghui,Wang Zhiyong
DOI: https://doi.org/10.3788/aos201838.0514001
2018-01-01
Abstract:A high-speed modulation of 4 x 15 Gbit/s 850 nm vertical cavity surface emitting lasers (VCSEL) array with oxidation aperture of 7 mu m and adjacent unit interval of 250 mu m is demonstrated. Its cpitaxy structure has a strained multiple quantum well active region of lnGaAs/AIGaAs and a double oxide confinement layer grown with the metal organic chemical vapor deposition (MOCVD) apparatus. And in the chip fabrication process, a series of technologies arc used, such as the breakpoint monitor inductively coupled plasma etching and the wet oxidation precise control. The static and dynamic characteristics of the VCSEI, array arc measured. For the single VCSEI, cell, the threshold current and slop efficiency arc 0.7 mA and 0.8 W/A, respectively. And the optical power reaches 4.5 mW at the working current of 6 mA, meanwhile the voltage is 2.3 V. Modulated by a 15 Gbit/s non-return zero code (NRZ), VCSEI, cells perform eye diagrams with clear profiles, fine stitches, tiny jitter and few crosstalk. For the eye diagram relative parameters, such as rise time, fall time, signal-to-noise ratio, root mean square jitter and so on, some comparisons arc made among VCSEI, cells in the array. The results indicate that the consistency of the dynamic characteristics is good. In addition, the consistency of device static characteristics among the VCSEL cells in the whole wafer is analyzed through the method of boxplot. All characteristics show a high consistency, which can meet the requirement of mass-production.