High Precision Current Mirror Circuit Based on Two-Dimensional Material Transistors

Shiping Gao,Chen Pan,Pincheng Su,Xing-Jian Yangdong,Wentao Yu,Zhoujie Zeng,Yu Shen,Jingwen Shi,Yanwei Cui,Pengfei Wang,Yuekun Yang,Cong Wang,Bin Cheng,Shi-Jun Liang,Feng Miao
DOI: https://doi.org/10.1007/s11432-024-4083-6
2024-01-01
Science China Information Sciences
Abstract:We first report a 2D material-based P-FET with excellent output current saturation characteristics and demonstrate the highest small-signal output impedance characteristics among all previously published 2D-FETs. Further, we utilize the excellent performance of the device to demonstrate a current mirror circuit, which has better high precision current replication performance than silicon-based devices. This work provides a possible technical approach for the development of high-performance analog circuit devices based on 2D materials.
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