Room-temperature Van Der Waals Magnetoresistive Memories with Data Writing by Orbital Current in the Weyl Semimetal TaIrTe4

Dong Li,Xing-Yu Liu,Zhen-Cun Pan,An-Qi Wang,Jiantian Zhang,Peng Yu,Zhi-Min Liao
DOI: https://doi.org/10.1103/physrevb.110.035423
IF: 3.7
2024-01-01
Physical Review B
Abstract:Current-induced out of plane magnetization has been utilized for field-free switching of ferromagnets with perpendicular magnetic anisotropy. Identifying systems capable of energy-efficiently converting charge currents into out of plane orbit- or spin-polarized currents is crucial for advancing magnetic memory technologies. Here we introduce the Berry curvature dipole as a key evaluation factor, directly measurable through nonlinear Hall effects. In the Weyl semimetal TaIrTe4 used in our experiments, applying a current parallel to the Berry curvature dipole results in out of plane orbital magnetization, which governs the field-free perpendicular magnetization switching in TaIrTe4/Fe3GaTe2 heterostructures. Notably, all-electric control of van der Waals magnetoresistive memory at room temperature has been achieved with a low critical current density 2x10^6A/cm2 for data writing. Our findings reveal the connection between nonlinear Hall effects and field-free magnetization switching, highlighting the potential of the Berry curvature dipole in advancing orbitronics.
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