Abstract:Two-dimensional van der Waals (2D vdW) ferromagnets possess outstanding scalability, controllable ferromagnetism, and out-of-plane anisotropy, enabling the compact spintronics-based non-volatile in-memory computing (nv-IMC) that promises to tackle the memory wall bottleneck issue. Here, by employing the intriguing room-temperature ferromagnetic characteristics of emerging 2D Fe3GeTe2 with the dissimilar electronic structure of the two spin-conducting channels, we report on a new type of non-volatile spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device based on Fe3GeTe2/MgO/Fe3GeTe2 heterostructure, which demonstrates the uni-polar and high-speed field-free magnetization switching by adjusting the ratio of field-like torque to damping-like torque coefficient in the free layer. Compared to the conventional 2T1M structure, the developed 3-transistor-2-MTJ (3T2M) cell is implemented with the complementary data storage feature and the enhanced sensing margin of 201.4% (from 271.7 mV to 547.2 mV) and 276% (from 188.2 mV to 520 mV) for reading "1" and "0", respectively. Moreover, superior to the traditional CoFeB-based MTJ memory cell counterpart, the 3T2M crossbar array architecture can be executed for AND/NAND, OR/NOR Boolean logic operation with a fast latency of 24 ps and ultra-low power consumption of 2.47 fJ/bit. Such device to architecture design with elaborated micro-magnetic and circuit-level simulation results shows great potential for realizing high-performance 2D material-based compact SOT magnetic random-access memory, facilitating new applications of highly reliable and energy-efficient nv-IMC.

Room-temperature orbit-transfer torque enabling van der Waals magnetoresistive memories

Orbit-transfer torque driven field-free switching of perpendicular magnetization

Room-temperature Van Der Waals Magnetoresistive Memories with Data Writing by Orbital Current in the Weyl Semimetal TaIrTe4 4

Room-temperature Van Der Waals Magnetoresistive Memories with Data Writing by Orbital Current in the Weyl Semimetal TaIrTe4

Van der Waals Spin-Orbit Torque Antiferromagnetic Memory

Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

All van der Waals three-terminal SOT-MRAM realized by topological ferromagnet Fe3GeTe2

Harnessing Orbital Hall Effect in Spin-Orbit Torque MRAM

Two-dimensional materials prospects for non-volatile spintronic memories

High-density Magnetoresistive Random Access Memory Operating at Ultralow Voltage at Room Temperature

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Deterministic and non-volatile switching of all-van der Waals spin-orbit torque system above room temperature without external magnetic fields

Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe 3 GeTe 2

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe 3 GaTe 2 Devices

Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2

Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys (Adv. Electron. Mater. 3/2024)

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques