Abstract:Room-temperature electrically-tuned coercivity and nonvolatile multi-states magnetization switching is crucial for next-generation low-power 2D spintronics. However, most methods have limited ability to adjust the coercivity of ferromagnetic systems, and room-temperature electrically-driven magnetization switching shows high critical current density and high power dissipation. Here, highly-tunable coercivity and highly-efficient nonvolatile multi-states magnetization switching are achieved at room temperature in single-material based devices by 2D van der Waals itinerant ferromagnet Fe$_3$GaTe$_2$. The coercivity can be readily tuned up to ~98.06% at 300 K by a tiny in-plane electric field that is 2-5 orders of magnitude smaller than that of other ferromagnetic systems. Moreover, the critical current density and power dissipation for room-temperature magnetization switching in 2D Fe$_3$GaTe$_2$ are down to ~1.7E5 A cm$^{-2}$ and ~4E12 W m$^{-3}$, respectively. Such switching power dissipation is 2-6 orders of magnitude lower than that of other 2D ferromagnetic systems. Meanwhile, multi-states magnetization switching are presented by continuously controlling the current, which can dramatically enhance the information storage capacity and develop new computing methodology. This work opens the avenue for room-temperature electrical control of ferromagnetism and potential applications for vdW-integrated 2D spintronics.

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in van der Waals Fe 3 GaTe 2 Devices

Room-Temperature Highly Efficient Nonvolatile Magnetization Switching by Current in Van Der Waals Fe3GaTe2 Devices.

Highly efficient room-temperature nonvolatile magnetic switching by current in Fe3GaTe2 thin flakes

Room-Temperature Highly-Tunable Coercivity and Highly-Efficient Nonvolatile Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe$_3$GaTe$_2$

Room-temperature Highly-Tunable Coercivity and Highly-Efficient Multi-States Magnetization Switching by Small Current in Single 2D Ferromagnet Fe3GaTe2

Efficient current-induced spin torques and field-free magnetization switching in a room-temperature van der Waals magnet

Room‐Temperature van der Waals Ferromagnet Switching by Spin‐Orbit Torques

Room-temperature van der Waals 2D ferromagnet switching by spin-orbit torques

Tunable Asymmetric Magnetoresistance in an Fe3GeTe2/graphite/Fe3GeTe2 Lateral Spin Valve.

Current-induced switching of a van der Waals ferromagnet at room temperature

Current-induced deterministic switching of van der Waals ferromagnet at room temperature

Modulating Above-Room-temperature Magnetism in Ga-implanted Fe5GeTe2 Van Der Waals Magnets

Highly Efficient Nonvolatile Magnetization Switching and Multi‐Level States by Current in Single Van der Waals Topological Ferromagnet Fe 3 GeTe 2

Room-temperature spin-valve devices without spacer layers based on Fe3GaTe2 van der Waals homojunctions

Room‐Temperature, Current‐Induced Magnetization Self‐Switching in A Van Der Waals Ferromagnet

Deterministic and non-volatile switching of all-van der Waals spin-orbit torque system above room temperature without external magnetic fields

Room temperature energy-efficient spin-orbit torque switching in two-dimensional van der Waals Fe3GeTe2 induced by topological insulators

Room temperature energy-efficient spin-orbit torque switching in wafer-scale all-vdW heterostructure

Highly efficient nonvolatile magnetization switching and multi-level states by current in single van der Waals topological ferromagnet Fe3GeTe2

Fe3GaTe2/MoSe2 Ferromagnet/Semiconductor 2D van der Waals Heterojunction for Room-Temperature Spin-Valve Devices