Low-temperature NO 2 Sensor Based on Γ-in 2 Se 3 /in 2 O 3 Nanoflower Heterojunction

Haixia Xing,Xinlei Li,Shupeng Sun,Baoyu Huang,Xiaogan Li
DOI: https://doi.org/10.1016/j.snb.2024.136034
2024-01-01
Abstract:The gamma-In 2 Se 3 /In 2 O 3 nanoflower-like heterojunctions were synthesized by solvothermal treatment followed by thermal oxidation in Air. The nanoflower-like gamma-In 2 Se 3 /In 2 O 3 -based chemiresistive-type sensor showed a significantly enhanced response to NO 2 at an operating temperature of 170 degrees C. The sensor achieves a response of 2.69-0.2 ppm NO 2 at 170 degrees C. The sensor exhibits remarkable selectivity to several possible interferents such as carbon monoxide, ammonia, formaldehyde, acetone, methanol, and toluene, and good stability at 170 degrees C. The nanoflower structure increases the specific surface area and introduces more active sites, which improves the sensitivity of the sensor to NO 2 . The heterojunction formed between gamma-In 2 Se 3 and In 2 O 3 improves the charge carrier transfer between NO 2 gas molecules and sensing materials, thereby increasing the response of the sensor to NO 2 . Density functional theory was used to elucidate this sensing mechanism, and it was found that improved sensing performance is mainly due to heterojunction formation, which increases the adsorption energy of nitrogen dioxide molecules on a sensing material surface and facilitates charge transfer between molecules.
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