Optoelectronic Gas Sensor Based on Few-Layered InSe Nanosheets for NO 2 Detection with Ultrahigh Antihumidity Ability

Lu Zhang,Zhongjun Li,Jiang Liu,Zhengchun Peng,Jia Zhou,Han Zhang,Yingchun Li
DOI: https://doi.org/10.1021/acs.analchem.0c01941
IF: 7.4
2020-07-20
Analytical Chemistry
Abstract:Two-dimensional (2D) transition-metal/metal chalcogenides including MoS<sub>2</sub>, MoSe<sub>2</sub>, WS<sub>2</sub>, SnS<sub>2</sub>, etc. have shown considerable potential for the fabrication of gas sensors for NO<sub>2</sub> detection. However, these sensors usually suffer from sluggish and incomplete recovery at room temperature, and their sensitivities are limited by presorbed O<sub>2</sub>. In this work, a novel optoelectronic gas sensor based on direct-bandgap InSe nanosheets was demonstrated. Because of the excellent photoelectric and sensing properties in few-layer InSe, detection of NO<sub>2</sub> at room temperature was realized. Ultrahigh and reversible responses were obtained under ultraviolet (UV) light illumination, and the limit of detection (0.98 ppb) was ∼40 times lower than that observed without UV light. Furthermore, the effects of O<sub>2</sub> and H<sub>2</sub>O molecules on sensor performance were fully studied through experiments and density functional theory. Some new mechanisms of NO<sub>2</sub> detection in high relative humidity conditions under UV illumination were proposed, including regulation of proton transfer and induction of H<sub>2</sub>O<sub>2</sub> reduction. In all, this work not only broadens the application field of 2D InSe, but also demonstrates the potential prospect of detecting ppb-level NO<sub>2</sub> in complex circumstances such as human breath by using 2D material-based sensors with light activation.The Supporting Information is available free of charge at <a class="ext-link" href="/doi/10.1021/acs.analchem.0c01941?goto=supporting-info">https://pubs.acs.org/doi/10.1021/acs.analchem.0c01941</a>.Methods of NO<sub>2</sub> detection in human breath and theoretical calculation, the schematic diagram of the gas-sensing measurement system, more details of characterization and sensing performance of InSe/IDEs and one-chip InSe device and the details of O<sub>2</sub> plasma treatment for InSe/IDEs (<a class="ext-link" href="/doi/suppl/10.1021/acs.analchem.0c01941/suppl_file/ac0c01941_si_001.pdf">PDF</a>)This article has not yet been cited by other publications.
chemistry, analytical
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