Gas sensors based on SnS 2 /In 2 O 3 for high performance NO 2 detection at room temperature

Chen Jin-Long,Tao Ran,Li Chong,Zhang Jian-Lei,Fu Chen,Luo JingTing,
DOI: https://doi.org/10.7498/aps.73.20231554
IF: 0.906
2024-01-01
Acta Physica Sinica
Abstract:NO 2 is a toxic gas that reacts with other organic compounds in the air, causing air pollution and posing a significant risk to humans. Therefore, a gas sensor is needed to detect NO 2 . However, conventional NO 2 gas sensors are difficult to operate at room temperature (25°C). In this study, NO 2 gas sensing by SnS 2 /In 2 O 3 at room temperature (25°C) is reported. In 2 O 3 quantum dots and SnS 2 nanosheets were prepared by the hot-injection and hydrothermal methods. By virtue of the unique two-dimensional structure of SnS 2 , In 2 O 3 was decorated on it, and the composite enhanced its sensing performance. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS). The results demonstrate that the composites prepared by 52% In 2 O 3 exhibit the best sensing response. The fabricated sensor shows a response of 26.6 to 1000 ppb NO 2 , along with fast response and recovery times, respectively, at room temperature (25°C). Moreover, this sensor demonstrates excellent reproducibility and selectivity. The heterojunction structure increases the number of active sites and accelerates the gas transport, which promotes charge transfer and gas desorption to improve NO 2 gas sensing performance. This excellent sensing performance has a great application prospect in NO 2 detection.
physics, multidisciplinary
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