Abstract:A reliable one‐step van der Waals integration technique is developed for centimeter‐scale transfer printing of multilayer top‐gate stacks. This technique enables the realization of superior electrical performance and threshold voltage control in MoS2 transistors. Depletion‐mode Al‐gated transistors and enhancement‐mode Au‐gated transistors are utilized to construct inverters, logic gates, static random‐access memory, and ring oscillators, demonstrating the functionality of multi‐threshold 2D circuits. Transition‐metal dichalcogenides (TMDs), as atomically thin semiconductors, have shown immense promise for next‐generation electronics due to their high mobility and potential for creating van der Waals heterostructures. However, precise control of the threshold voltage (Vth) in field‐effect transistors (FETs) remains a significant challenge, impeding the development of 2D material circuits with tailored electronic functions. Herein, a graphene‐assisted one‐step van der Waals integration technique is presented for fabricating multi‐threshold 2D functional circuits. Graphene's unique property of having a surface without dangling bonds is utilized as an intermediary layer, allowing for the transfer of electrodes with various work functions and high‐κ dielectric layers onto 2D channel materials in a single step. This technique has successfully produced Al‐gated MoS2 FETs with a Vth of −0.2 V and Au‐gated MoS2 FETs with a Vth of 1.9 V. This precision enables the development of functional devices such as rail‐to‐rail inverters with large noise margins. Furthermore, more complex multi‐threshold 2D circuits are achieved, including basic logic gates (NOT, NAND, NOR), six‐transistor static random‐access memory (6T‐SRAM), and ring oscillators (RO). This work showcases a scalable and effective strategy for threshold voltage engineering in 2D material‐based circuits, paving the way for sophisticated electronic and optoelectronic applications.

Tailoring Lithium Intercalation Pathway in 2D Van Der Waals Heterostructure for High‐speed Edge‐contacted Floating‐gate Transistor and Artificial Synapses

Ultimate dielectric scaling of 2D transistors via van der Waals metal integration

Lithium Ion Intercalation-Induced Metal-Insulator Transition in Inclined-Standing Grown 2D Non-Layered Cr2S3 Nanosheets

High-Fidelity Transfer of 2D Semiconductors and Electrodes for Van Der Waals Devices

Band‐tailored Van Der Waals Heterostructure for Multilevel Memory and Artificial Synapse

High Mobility Transistors and Flexible Optical Synapses Enabled by Wafer-Scale Chemical Transformation of Pt-Based 2D Layers

Reliable wafer-scale integration of two-dimensional materials and metal electrodes with van der Waals contacts

Bridging Synthesis and Controllable Doping of Monolayer 4 In. Length Transition-Metal Dichalcogenides Single Crystals with High Electron Mobility

High-Performance Wafer-Scale MoS2 Transistors Toward Practical Application

Surface Charge Transfer Doping Enabled Large Hysteresis in van der Waals Heterostructures for Artificial Synapse

Chemical assembly of atomically thin transistors and circuits in a large scale

Doping, Contact and Interface Engineering of Two-Dimensional Layered Transition Metal Dichalcogenides Transistors

Large-scale Chemical Assembly of Atomically Thin Transistors and Circuits

Highly reproducible van der Waals integration of two-dimensional electronics on the wafer scale

One‐Step Van der Waals Integration of Multi‐Threshold 2D Functional Circuits

Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics

Bottom-up Integration of TMDCs with Pre-Patterned Device Architectures via Transfer-free Chemical Vapor Deposition

Artificially created interfacial states enabled van der Waals heterostructure memory device

Nanoforming of transferred metal contacts for enhanced two-dimensional field effect transistors

Photomodulation of Charge Transport in All‐Semiconducting 2D–1D Van Der Waals Heterostructures with Suppressed Persistent Photoconductivity Effect

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS$_{2}$ transistor