Abstract:Two-dimensional(2D)semiconductors offer an atomic thickness that facilitates superior gate field penetration and enables transistors to maintain shrinking with suppressed short-channel effects,thereby being considered as channel materials for future transistors in the post-Moore era.As a member of high-mobility 2D semiconductors,the air-stable Bi2O2Se with a moderate bandgap has drawn significant attention.Distinguished from other 2D materials,Bi2O2Se can be oxidized layer-by-layer to form a high-k native-oxide dielectric,Bi2SeO5,with an atomically sharp interface,similar to Si/SiO2 in the semiconductor industry.These characteristics make Bi2O2Se an ideal material platform for fabricating various devices with excellent performance,such as transistors,thermoelectrics,optoelectronics,sensors,flexible devices and memory devices.To realize advanced applications of 2D Bi2O2Se,it is essential to develop scalable and high-quality preparation methods with relatively low cost.Chemical vapor deposition(CVD)has shown promise in meeting these requirements.Over the past years,CVD has been widely used to synthesize 2D Bi2O2Se despite some remaining challenges.In this review,we summarize the recent progress in the controlled growth of 2D Bi2O2Se via the CVD method.We begin by introducing the crystal structure and properties of Bi2O2Se.Next,we focus on the morphology control of 2D Bi2O2Se,including various nucleation modes and different dimensionalities by carefully manipulating the CVD process.In terms of nucleation modes,in-plane and vertical epitaxial growth of Bi2O2Se,achieved by controlling the interaction between epitaxial layer and substrate,are reviewed.Wafer-scale continuous Bi2O2Se film facilitates the device integration while vertical 2D fins pave the way for fabricating high-performance fin field-effect-transistors(FinFET).As for the dimensionality control,the transition from 2D nanoplates to 1D nanoribbons is investigated.Parameters such as precursor ratio,growth temperature and types of catalyst play a key role in such transition.We then discuss the construction of ordered arrays of Bi2O2Se with the above morphology by selective growth and post treatment for potential device integration.In addition,we highlight the electrical quality improvement of the grown material via defect control and strain release.For example,both the Se poor growth condition and the out-of-plane strain-free growth contribute to higher mobility of Bi2O2Se.Lastly,we propose potential strategies for precise control of Bi2O2Se structures and quality.In order to meet the demands of advanced electronic applications,more efforts are expected to made to achieve uniform,transferable and site-specific preparation of high-quality single-crystal Bi2O2Se on a large scale.

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Vertically grown ultrathin Bi 2 SiO 5 as high- κ single-crystalline gate dielectric

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A Single-Crystalline Native Dielectric for Two-Dimensional Semiconductors with an Equivalent Oxide Thickness below 0.5 Nm

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Designed Growth of Large‐Size 2D Single Crystals

Controlled 2D growth of organic semiconductor crystals by suppressing “coffee-ring” effect

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Epitaxial growth of wafer-scale molybdenum disulfide semiconductor single crystals on sapphire

Non-epitaxial single-crystal 2D material growth by geometric confinement

Crystal-orientation controlled epitaxial CeO2 dielectric thin films on Si(100) substrates using pulsed laser deposition

Two-dimensional quasi-freestanding molecular crystals for high-performance organic field-effect transistors

Atomically Thin Decoration Layers for Robust Orientation Control of 2D Transition Metal Dichalcogenides

Fe-assisted epitaxial growth of 4-inch single-crystal transition-metal dichalcogenides on c-plane sapphire without miscut angle

12-inch growth of uniform MoS2 monolayer for integrated circuit manufacture

Integrating high-quality dielectrics with one-nanometer equivalent oxide thickness on two-dimensional electronic devices

Dual-coupling-guided epitaxial growth of wafer-scale single-crystal WS2 monolayer on vicinal a-plane sapphire

High quality and wafer-scale cubic silicon carbide single crystals

Single-crystal two-dimensional material epitaxy on tailored non-single-crystal substrates