Abstract:The comparison of Hf0.5Zr0.5O2/La0.67Sr0.33MnO3 (HZO/LSMO) systems with and without the LSMO top electrode reveals the LSMO's enhancement of HZO's structure and ferroelectric properties. The LSMO electrode prevents the formation of the nonpolar monoclinic phase and stabilizes the polar rhombohedral phase. Additionally, it improves leakage current, wake‐up effect, and fatigue behavior of HZO films by reducing the oxygen vacancies. Hafnium‐oxide‐based ferroelectrics have garnered considerable research interest, primarily for their robust ferroelectricity at the nanoscale and their high compatibility with complementary metal‐oxide‐semiconductors processes. However, the impact of electrodes on the ferroelectric properties of hafnium‐oxide layer, particularly that of top electrodes, is not yet fully understood even in the simplest capacitor geometry. In this study, the La0.67Sr0.33MnO3/Hf0.5Zr0.5O2 (LSMO/HZO) epitaxial heterostructure is utilized as a model system to conduct a systematic comparative study on ferroelectricity between the LSMO/HZO (H‐LS) bilayer and LSMO/HZO/LSMO (LS‐H‐LS) trilayer samples. In comparison to the H‐LS sample, the LS‐H‐LS sample exhibits a more uniform polar domain configuration and larger ferroelectric polarization. Moreover, the LS‐H‐LS sample exhibits significant improvements in leakage, endurance, and retention. These substantial enhancements in ferroelectricity are likely due to interfacial stress imposed by the LSMO capping layer and its capacity to accommodate extra oxygen vacancies. These results underscore the pivotal role of oxide‐based top electrodes in determining the ferroelectricity of hafnium‐oxide‐based heterostructures, providing crucial insights for optimizing the performance of innovative ferroelectric devices.

Improving the ferroelectric properties of Lu doped Hf0.5Zr0.5O2thin films by capping a CeOxlayer.

Improving the ferroelectric properties of Lu doped Hf 0.5 Zr 0.5 O 2 thin films by capping a CeO x layer

Enhancement of Ferroelectricity and Homogeneity of Orthorhombic Phase in Hf0.5Zr0.5O2 Thin Films

Enhancement of ferroelectricity and homogeneity of orthorhombic phase in Hf 0.5 Zr 0.5 O 2 thin films

Stabilizing the Ferroelectric Phase of Hf 0.5 Zr 0.5 O 2 Thin Films by Charge Transfer

Stabilizing the Ferroelectric Phase of Hf_{0.5}Zr_{0.5}O_{2} Thin Films by Charge Transfer.

Excellent Ferroelectric Properties of Hf0.5Zr0.5O2 Thin Films Induced by Al2O3 Dielectric Layer

Improvement of remanent polarization of CeO 2 –HfO 2 solid solution thin films on Si substrates by chemical solution deposition

Optimizing the Ferroelectric Performance of Hf0.5Zr0.5O2 Epitaxial Film by La0.67Sr0.33MnO3 Capping Layer

Enhanced polarization and endurance properties of ZrO2-based ferroelectric capacitor using HfO2interfacial layer

Improved ferroelectric properties of CMOS back-end-of-line compatible Hf0.5Zr0.5O2 thin films by introducing dielectric layers

Epitaxial Orientation-Controlled High Crystallinity and Ferroelectric Properties in Hf0.5Zr0.5O2 Films

Ferroelectric Hf0.5Zr0.5O2 Thin Films Deposited Epitaxially on (110)-Oriented SrTiO3

Enhanced Ferroelectric Properties and Insulator-Metal Transition-Induced Shift of Polarization-Voltage Hysteresis Loop in VOx-Capped Hf0.5Zr0.5O2 Thin Films.

The Enhanced Polarization Switching Speed and Endurance in Hf0.5Zr0.5O2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Ferroelectricity of Hf 0.5 Zr 0.5 O2 Thin Films Free From the Influence of Electrodes by Using Al2O3 Capping Layers

Enhanced Ferroelectric Polarization with Less Wake-Up Effect and Improved Endurance of Hf0.5Zr0.5O2 Thin Films by Implementing W Electrode

Interfacial Regulation of Dielectric Properties in Ferroelectric Hf0.5Zr0.5O2 Thin Films

The Enhanced Polarization Switching Speed and Endurance in Hf 0.5 Zr 0.5 O 2 Ferroelectric Thin Film by Modulating Oxygen Dose in Ferroelectric Layers

Interface-engineered ferroelectricity of epitaxial Hf0.5Zr0.5O2 thin films

Oxygen Vacancy Modulation with TiO₂ Stack Interface Engineering for Ferroelectric Hf0.5Zr0.5O₂ Thin Films