Abstract:GeS 2 monolayer has been successfully prepared. Here, to further expand their applications and discover new physical property, we construct armchair-type GeS 2 nanoribbons (AGeS 2 NR) and use different concentrations of H and O atoms for the edge modification, as well as their structural stability, electronic properties, carrier mobility, and physical field modulation effects are studied deeply. The results show that the edge-modified nanoribbons have a higher energy and thermal stability. The bare edge nanoribbons are nonmagnetic semiconductors, while the edge modification can change the bandgap of AGeS 2 NR and make them become wide or narrowed bandgap semiconductor, or a metal, which is closely related to the elimination or partial elimination of the edge states or the creation of hybridization bands. Thus edge modification extends the application range of nanoribbons in the field of electronic devices and optical devices. In addition, the carrier mobility is found to be very sensitive to the edge modification, the carrier mobility (electrons and holes) of nanoribbons can be tuned to have a difference up to one order of magnitude, and the carrier mobility polarization up to one order of magnitude occurs. Strain effect studies reveal that the semiconducting nanoribbons are robust in keeping the electronic phase unchanged over a wide strain range, which is useful for maintaining the stability of the electron transport in the related devices. Most of the semiconducting nanoribbons have the stability to keep the semiconducting properties unchanged under high external electric field, but the bandgap can be reduced significantly with the increase of the electric field. In short, this study provides a theoretical analysis and reference for understanding the property of GeS 2 nanoribbons and developing related devices.

Edge-Cutting Transfer: Deterministic Assembly of Flexible Si/Ge Nanoribbons Via Edge-Cutting Transfer and Printing for Van Der Waals Heterojunctions (small 33/2015)

Deterministic Assembly of Flexible Si/Ge Nanoribbons Via Edge-Cutting Transfer and Printing for Van Der Waals Heterojunctions.

Fabrication of silicon-based flexible optical waveguide by edge-cutting transfer technique

The Effect of Edge Functionalization on the Device Performance of Monolayer Si 0.5 Ge 0.5 Nanoribbon Transistors

Automated and Parallel Transfer of Arrays of Oriented Graphene Ribbons

Graphene edge lithography.

Large-scale fabrication of graphene-based electronic and MEMS devices

Direct Growth of Graphene Nanoribbons for Large-Scale Device Fabrication

Directed self-organization of graphene nanoribbons on SiC

A facile nanowire fabrication approach based on edge lithography

Matryoshka-Inspired Continuous Assembly of Flexible Silicon Microribbons and Photodetectors via Selective Transfer Printing

Scalable and Direct Growth of Graphene Micro Ribbons on Dielectric Substrates

Direct Growth of Globally Aligned Graphene Nanoribbons on Reconstructed Sapphire Substrate Using PECVD

Ledge-directed epitaxy of continuously self-aligned single-crystalline nanoribbons of transition metal dichalcogenides

Rational Fabrication of Graphene Nanoribbons Using a Nanowire Etch Mask

Direct mechano-sliding transfer of chemical vapor deposition grown silicon nanowires for nanoscale electronic devices

Adjusting the Electronic Properties of Silicon Carbide Nanoribbons by Introducing Edge Functionalization

Epitaxial Graphene Nanoribbon Array Fabrication Using BCP-assisted Nanolithography.

Controllable Edge Epitaxy of Helical GeSe/GeS Heterostructures

Substrate Engineering-Tailored Fabrication of Aligned Graphene Nanoribbon Arrays: Implications for Graphene Electronic Devices

Electronic Properties and Modulation Effects on Edge-Modified GeS 2 Nanoribbons