Abstract:Fabricating ultrathin silicon (Si) channels down to critical dimension (CD) <10 nm, a key capability to implementing cutting-edge microelectronics and quantum charge-qubits, has never been accomplished via an extremely low-cost catalytic growth. In this work, 3D stacked ultrathin Si nanowires (SiNWs) are demonstrated, with width and height of Wnw = 9.9 ± 1.2 nm (down to 8 nm) and Hnw = 18.8 ± 1.8 nm, that can be reliably grown into the ultrafine sidewall grooves, approaching to the CD of 10 nm technology node, thanks to a new self-delimited droplet control strategy. Interestingly, the cross-sections of the as-grown SiNW channels can also be easily tailored from fin-like to sheet-like geometries by tuning the groove profile, while a sharply folding guided growth indicates a unique capability to produce closely-packed multiple rows of stacked SiNWs, out of a single run growth, with the minimal use of catalyst metal. Prototype field effect transistors are also successfully fabricated, achieving Ion/off ratio and sub-threshold swing of >106 and 125 mV dec-1 , respectively. These results highlight the unexplored potential of versatile catalytic growth to compete with, or complement, the advanced top-down etching technology in the exploitation of monolithic 3D integration of logic-in-memory, neuromorphic and charge-qubit applications.

Direct mechano-sliding transfer of chemical vapor deposition grown silicon nanowires for nanoscale electronic devices

Optical Control with Large-Scale Assembly of Highly Aligned Silver Nanowires

Ultrafast growth of single-crystalline Si nanowires

Plasmon-driven Nanowire Actuators for On-Chip Manipulation

Tiny silicon nano-wires synthesis on silicon wafers

Silicon Nanowire Synthesis by Chemical Vapor Deposition

Scalable Alignment of CdS Nanowires Based on Efficient Roll-on Transfer Technique.

A Nanoscale Technique Of The Assembly Approach For Inas Nanowire Nano Device

Engineering Island-Chain Silicon Nanowires Via a Droplet Mediated Plateau-Rayleigh Transformation

Dispersion, Refinement, and Manipulation of Single Silicon Nanowires

Electric-Field-Driven Localization of Molecular Nanowires in Wafer-Scale Nanogap Electrodes

Automatic release of silicon nanowire arrays with a high integrity for flexible electronic devices

Nanoscale Silicon Wires Synthesized Using Simple Physical Evaporation

Terrace-confined guided growth of high-density ultrathin silicon nanowire array for large area electronics

Facile 3D Integration of Si Nanowires on Bosch-etched Sidewalls for Stacked Channel Transistors

Solution-Liquid-Solid Growth of Semiconductor Nanowires

Controlled Assembly of Zinc Oxide Nanowires Using Dielectrophoresis

A facile nanowire fabrication approach based on edge lithography

Creation of nanostructures with poly(methyl methacrylate)-mediated nanotransfer printing.

Ultra-Confined Catalytic Growth Integration of Sub-10 Nm 3D Stacked Silicon Nanowires Via a Self-Delimited Droplet Formation Strategy.

Fabrication of Silver Nanowires in Situ in Si Chip Based on a Novel Electrochemical Method