Modification of Indium Tin Oxide Surface with HCl for Source/Drain Electrodes in Organic Thin Film Transistors
Xin Rong,Jiangli Han,Xinyu Tian,Lixian Jiang,Zhewei Li,Rubo Xing,Liping Shen,Lian Duan,Guifang Dong
DOI: https://doi.org/10.1002/admt.202101487
IF: 6.8
2022-01-01
Advanced Materials Technologies
Abstract:In recent years, exciting advances have been achieved in pursuing organic thin film transistors (OTFTs) with high mobility. Whereas, the economical infeasibility of Au source/drain (S/D) electrodes that are widely used in OTFTs hinders the further development of OTFTs in industry. In this study, the modified indium tin oxide (ITO) as S/D electrodes is adopted. The ITO is modified by HCl aqueous solutions, its surface work function is improved from 4.8 to 5.5 eV. By first-principle calculations and experiments, the charge analysis shows that the Cl atom traps 0.475 electrons, which indicates that In-Cl dipoles are responsible for the increase of the surface work function, besides the HCl modification leads to In+-Cl- bonds instead of In3+-Cl- bonds on the ITO surface compared with the reported InCl3 modification. More encouragingly, In+-Cl- surface is found to have higher Cl density, higher work function and higher conductivity. TIPS-pentacene, with suitable HOMO level of 5.2 eV, is adopted as organic semiconductor, and the bar-coating process is optimized to realize oriented films. OTFTs with maximum field-effect mobility of 0.77 cm(2) V-1 s(-1) are achieved. The ITO electrodes modified by HCl can be promising in the industry.