Abstract:The achievement of electrically-pumped laser diodes at the micro/nanoscale levels is anticipated to feature an indispensable role in future photonic integrated circuits. However, the conventional p–n junction device architectures are inefficient due to serious optical and electrical losses. Herein, an electrically-injected whispering-gallery-mode (WGM) microlaser diode, which contained an n-AlGaN electron-injection layer, a ZnO microwire doped with a Ga impurity (ZnO:Ga MW), a Pt nanolayer, a MgO nanolayer and a p-GaN substrate as a hole supplier, was fabricated and systematically investigated. In practice, upon continuous-wave operation of electrical pumping at ambient temperature, the well-designed n-AlGaN/n-ZnO:Ga MW/Pt/MgO/p-GaN device exhibits remarkable double-heterojunction (n–n–p) characteristics, enabling lasing in the ultraviolet spectral region, accompanied by efficient suppression of spontaneous radiation. Furthermore, the device exhibits fascinating properties, with a threshold as low as 12.5 mA and a high quality ( Q )-factor of approximately 1943. The carefully-designed double heterostructure enables superinjection of current, as well as efficient confinement of injected carriers and photons. In this case, the electron–hole recombination, light-emission/lasing region, and population-inversion zones coincide, and are mainly concentrated in the ZnO:Ga MW active region, thereby achieving the required population inversion at relatively low current-injection levels. Such a methodical design and construction of a double-heterojunction microlaser device could bring new technological opportunities to realize high-performance lasers with a low threshold, high Q -factor, distinct multiple modes, and efficient suppression of spontaneous radiation driven by electrical current.

ZnO Microwire Lasing Generated by Mid-Infrared Laser Pulses of Various Polarization

Enhancing Light Emission of Zno Microwire-Based Diodes by Piezo-Phototronic Effect

Controllable Growth of Aligned Monocrystalline CsPbBr3 Microwire Arrays for Piezoelectric‐Induced Dynamic Modulation of Single‐Mode Lasing

Microlaser based on a hybrid structure of a semiconductor nanowire and a silica microdisk cavity.

Surface plasmons promoted single-mode polariton lasing in a subwavelength ZnO nanowire

A single microwire near-infrared exciton-polariton light-emitting diode

Polariton Lasing In A Zno Microwire Above 450k

Aligned growth of ZnO nanowires and lasing in single ZnO nanowire optical cavities

Whispering Gallery Modes in A Bent Zno Microwire

Electro‐Optic Effect of ZnO Microcavity and Active Dynamic Lasing Mode Modulation

Single-nanowire single-mode laser.

Phosphorus Doped Zn1-xMgxO Nanowire Arrays

Polariton Lasing Of Quasi-Whispering Gallery Modes In A Zno Microwire

An electrically driven exciton–polariton microlaser diode based on a ZnO:Ga microribbon heterojunction

Exciton-polariton light-emitting diode based on a single ZnO superlattice microwire heterojunction with performance enhanced by Rh nanostructures.

Multiphoton Route to ZnO Nanowire Lasers

Low-threshold Two-Photon Pumped ZnO Nanowire Lasers.

Electrically driven optical resonance of spherical ZnO whispering gallery mode microcavity

Polarization Dependent Excitation and High Harmonic Generation from Intense Mid-IR Laser Pulses in ZnO

Electrically-pumped WGM microlaser realized in n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double heterojunction device

An electrically-pumped WGM microlaser realized in an n-AlGaN/n-ZnO:Ga microwire/Pt/MgO/p-GaN double-heterojunction device