Phosphorus Doped Zn1-xMgxO Nanowire Arrays
S. S. Lin,J. I. Hong,J. H. Song,Y. Zhu,H. P. He,Z. Xu,Y. G. Wei,Y. Ding,R. L. Snyder,Z. L. Wang
DOI: https://doi.org/10.1021/nl902067a
IF: 10.8
2009-01-01
Nano Letters
Abstract:We demonstrate the growth of phosphorus doped Zn1-xMgxO nanowire (NW) using pulsed laser deposition. For the first time, p-type Zn0.92Mg0.08O:P NWs are likely obtained In reference to atomic force microscopy based piezoelectric output measurements, X-ray photoelectron spectroscopy, and the transport property between the NWs and a n-type ZnO film. A shallow acceptor level of similar to 140 meV is identified by temperature-dependent photoluminescence. A piezoelectric output of 60 mV on average has been received using the doped NWs. Besides a control on NW aspect ratio and density, band gap engineering has also been achieved by alloying with Mg to a content of x = 0.23. The alloyed NWs with controllable conductivity type have potential application in high-efficiency all-ZnO NWs based LED, high-output ZnO nanogenerator, and other optical or electrical devices.