Multiphoton Route to ZnO Nanowire Lasers

C. F. Zhang,Z. W. Dong,G. J. You,S. X. Qian,H. Deng
DOI: https://doi.org/10.1364/ol.31.003345
2006-01-01
Abstract:With intense femtosecond laser excitation, multiphoton absorption-induced stimulated emission and laser emission in ZnO bulk crystal and nanowires have been demonstrated at room temperature. UV-stimulated emission peaks appeared in both bulk crystal and nanowires when the excitation exceeded certain thresholds, and a sharp lasing peak with a linewidth of ~0.5 nm was observed from ZnO nanowires. The emission properties were attributed to the band-edge emission of the recombination of carriers excited by two- and three-photon absorption processes in the wide-bandgap semiconductor.
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