Abstract:Microbumps play a crucial role in interlayer interconnections for advanced packaging. Among the prevalent microbump structures are Cu/Sn and Cu/Ni/Sn configurations. However, as the bump size continues to shrink, excessive Kirkendall voids tend to form in Cu/Sn microbumps, leading to potential reliability issues. While Cu/Ni/Sn structures can suppress Kirkendall void formation, Ni3Sn4 intermetallic compound (IMC) exhibits inferior physical properties compared to Cu3Sn and Cu6Sn5. In this study, a novel Cu/Ni/Cu/Sn1.8Ag (CNCT) Sn-rich microbump structure with controlled Cu thickness is proposed to suppress Kirkendall void formation while promoting Cu6Sn5 and Cu3Sn as interfacial IMCs. A Ni barrier layer is inserted to partition the Cu pillar and impede Cu atom replenishment from the bottom side. The remaining Cu pillar at the top is designed to be 3μm thick, which is intended to be fully consumed by 8μm Sn1.8Ag solder while simultaneously serving as redundant protection for the bottom Cu pillar against unexpected Sn spillage. The effects of high temperature storage (HTS) at 150°C on IMC evolution in CNCT microbump bonding were investigated for 1500hours. No significant voids were observed at the bonding interface during HTS. Interfacial positions recorded from 0 to 500hours show that the Cu3Sn IMC grows unidirectionally toward the Cu side but not toward the Sn side, indicating a greater diffusion flux of Sn atoms compared to Cu atoms. The diffusion coefficients of Cu in Cu3Sn (DCu,ε), Cu6Sn5 (DCu,η), and Sn in Cu3Sn (DSn,ε), Cu6Sn5 (DSn,η) at 150°C were calculated as 1.36×10-18m2/s, 5.01×10-19m2/s, 9.53×10-19m2/s and 1.10×10-18m2/s, respectively. The dramatic decrease of DCu,η suggests that the diffusion capacity of Cu atoms into Sn is significantly suppressed. The notable transformation of Cu3Sn to Cu6Sn5 occurred after 500hours. By 1500hours, Cu3Sn was greatly consumed, and the bonding interface tended to form a stable Cu/Ni/Cu6Sn5/Ni/Cu structure. Diffusion models were established and discussed to elucidate the mechanisms governing both stages.

Au-Rich/Sn-Bi Interconnection in Chip-on-Module Package

Au-Rich/Sn-Bi Interconnection in Chip-on-Module Package

Reliability Evaluation of Interconnection in COM Package

A Cu Pillar Bump Bonding Method Using Au-Sn Alloy Cap as the Interconnection Layer

Microstructural evolution of joints with and without Sb, Ni in Sn58Bi solder under electro-thermal-force coupling

Research Overview on the Electromigration Reliability of SnBi Solder Alloy

Low-temperature attaching of LED chips using SnBiIn solder nanoparticles

The Effect of Bi Addition on the Electromigration Properties of Sn-3.0Ag-0.5Cu Lead-Free Solder

Interfacial Reactions And Reliability Of Sn-Zn-Bi-Xcr Solder Joints With Cu Pads

High-Temperature Stable Au–Sn and Cu–Sn Interconnects for 3D Stacked Applications

Effect of Surface Finish of Substrate on Mechanical Reliability of in-48SN Solder Joints in Moems Package

An Insertion-Based Mechanical Interlock Cu-Sn Bonding Structure for Three-Dimensional Integration

Solid-State-Diffusion Bonding for Wafer-Level Fine-Pitch Cu/Sn/Cu Interconnect in 3-D Integration

Interfacial reaction and mechanical properties of Sn–Bi Cu core solder joints

Interfacial Microstructure and Mechanical Reliability of Sn-58Bi/ENEPIG Solder Joints

Experimental and computational investigation of low temperature Cu-Sn solid-state-diffusion bonding for 3D integration

A Cu/Ni/Cu/Sn1.8Ag Microbump Structure for Void-free Interface under Long Time High-Temperature Storage

Intermetallic compound evolution and mechanical properties of Cu/Sn58Bi/Cu 3D structures blended with B 4 C nanoparticles during isothermal aging

Low Temperature Au/Sn Solid-Liquid Diffusion Chip-to-Chip Bonding for MEMS Encapsulation

The design of low-temperature solder alloys and the comparison of mechanical performance of solder joints on ENIG and ENEPIG interface

Low temperature solid-state-diffusion bonding for fine-pitch Cu/Sn/Cu interconnect