Abstract:A novel and efficient strategy is developed for the annealing‐free solution prepared SnO2 electron transport layer for perovskite solar cells (PSCs). Through simple electrochemical regulation low defect concentration and optimized band alignment is acheived for PSC devices. A device power conversion efficiency (PCE) champion of 24.7% is reported with VOC champion of up to 1.19 V, in addition to a large area device PCE of 21.3%. The electron transport layer (ETL) plays a crucial role for efficiency and stability of perovskite solar cells (PSCs). As a promising low‐temperature ETL, tin oxide still requires complicated surface chemical decoration or heat‐treatments to further passivate the defects and adjust band energy level to improve the optoelectronic performance of the device. Herein, a novel and efficient strategy is developed for the solution prepared annealing‐free SnO2 ETL for PSCs. Through simple electrochemical regulation, the elemental composition, valence ratio of Sn, concentration of oxygen vacancies, hydroxyl groups, and dopant ions are precisely modified with the optimized the energy band, reduce the defect density, and enhance high carrier transport for PSCs. Thus, an increase of power conversion efficiency (PCE) from 21.6% to 24.7% and a high VOC of 1.19 V is obtained. The modified devices maintain 95% of the initial PCE after 2000 h of storage, and 80% of the initial PCE after 900 h of aging in an atmospheric environment at 75 °C and RH 20 ± 5%. Moreover, the perovskite solar module based on the as made SnO2 achieve a high PCE of 21.3%.

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