SnO x as Bottom Hole Extraction Layer and Top In Situ Protection Layer Yields over 14% Efficiency in Sn-Based Perovskite Solar Cells

Liang Wang,Mengmeng Chen,Shuzhang Yang,Namiki Uezono,Qingqing Miao,Gaurav Kapil,Ajay Kumar Baranwal,Yoshitaka Sanehira,Dandan Wang,Dong Liu,Tingli Ma,Kenichi Ozawa,Takeaki Sakurai,Zheng Zhang,Qing Shen,Shuzi Hayase
DOI: https://doi.org/10.1021/acsenergylett.2c01659
IF: 22
2022-10-03
ACS Energy Letters
Abstract:Sn-based perovskite solar cells (S-PSCs) are a promising candidate to replace toxic Pb-based PSCs. For promoting their industrial application, developing inorganic substitutions of unstable poly­(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) is also an important part due to its intrinsic stability and low cost. Here, we in situ prepared ambipolar SnO x by a simple and fast plasma-assistant strategy (P-SnO x ). The as-prepared P-SnO x works as a hole transport layer directly, yielding a 10.89 ± 0.51% power conversion efficiency (PCE) comparable to a PEDOT:PSS-based device (10.39 ± 0.72%). The top SnO x (T-SnO x ), composed of SnO2 and Sn metal, as a modifier and a protection layer of the perovskite by reducing Sn4+ to Sn2+, gives a 13.08 ± 0.33% device performance. This in situ top protective strategy combined with P-SnO x as a hole transport layer further boosts the champion PCE of S-PSCs to 14.09% (13.5 ± 0.32%).
materials science, multidisciplinary,chemistry, physical,nanoscience & nanotechnology,energy & fuels,electrochemistry
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