Abstract:A promising technique is offered for efficient control of full spin–orbit torque magnetization switching in a spin–orbit ferromagnet single layer via an external electric field. This work helps understand the mechanism of magnetization switching from the viewpoint of the effective field, which paves the way toward combining novel high‐efficiency and low‐power spintronics memory devices and conventional field‐effect semiconductor technologies. To achieve a desirable magnitude of spin–orbit torque (SOT) for magnetization switching and realize multifunctional spin logic and memory devices utilizing SOT, controlling the SOT manipulation is vitally important. In conventional SOT bilayer systems, researchers have tried to control the magnetization switching behavior via interfacial oxidization, modulation of spin–orbit effective field, and effective spin Hall angle; however, the switching efficiency is limited by the interface quality. A current‐induced effective magnetic field in a single layer of a ferromagnet with strong spin–orbit interactions, the so‐called spin–orbit ferromagnet, can be utilized to induce SOT. In spin–orbit ferromagnet systems, electric field application has the potential for manipulating the spin–orbit interactions via carrier concentration modulation. In this work, it is demonstrated that SOT magnetization switching can be successfully controlled via an external electric field using a (Ga, Mn)As single layer. By applying a gate voltage, the switching current density can be solidly and reversibly manipulated with a large ratio of 14.5%, which is ascribed to the successful modulation of the interfacial electric field. The findings of this work help further the understanding of the magnetization switching mechanism and advance the development of gate‐controlled SOT devices.

Field-free Manipulation of Exchange Bias in Perpendicularly Magnetized Pt/Co/IrMn Structures by Spin-Orbit Torque

L-Shaped Electrode Design For High-Density Spin-Orbit Torque Magnetic Random Access Memory With Perpendicular Shape Anisotropy

Spin-orbit torque switching without external field with a ferromagnetic exchange-biased coupling layer

Manipulating exchange bias by spin–orbit torque

Asymmetric Manipulation of Perpendicular Exchange Bias and Programmable Spin Logical Cells by Spin-Orbit Torque in a Ferromagnet/Antiferromagnet System

Field-free Switching of Perpendicular Magnetization in a Noncollinear Antiferromagnetic Mn3Sn/[Pt/Co]4 Heterostructure

Field-Free Switching of Perpendicular Magnetization Through Voltage-Gated Spin-Orbit Torque

Field-Free Magnetization Switching in a Ferromagnetic Single Layer Through Multiple Inversion Asymmetry Engineering.

Field-Free Switching of Perpendicular Magnetization Induced by Longitudinal Spin-Orbit-Torque Gradient

Field-free spin-orbit switching of perpendicular magnetization enabled by dislocation-induced in-plane symmetry breaking

Field-free Spin-Orbit Torque Perpendicular Magnetization Switching Induced by Metallic Multilayers

Field-free Approaches for Deterministic Spin–orbit Torque Switching of the Perpendicular Magnet

Field-Free Spin Hall Effect Driven Magnetization Switching in Pd/Co/Irmn Exchange Coupling System

Field-free switching of perpendicular magnetization in a noncollinear antiferromagnetic Mn 3 Sn/[Pt/Co] 4 heterostructure

High efficient field-free magnetization switching via exchange bias effect induced by antiferromagnetic insulator interface

Room Temperature Manipulation of Exchange Bias in Magnetic Heterojunctions

Field-free switching of perpendicular magnetization by cooperation of planar Hall and orbital Hall effects

Electric Field Control of Spin–Orbit Torque Magnetization Switching in a Spin–Orbit Ferromagnet Single Layer

Field-Free SOT-Switching Based on a Vertical Composition Gradient of Ferrimagnetic Alloys

Controllable Field-Free Switching of Perpendicular Magnetization Through Bulk Spin-Orbit Torque in Symmetry-Broken Ferromagnetic Films

Field-free Spin-Orbit Torque-Induced Switching of Perpendicular Magnetization in a Ferrimagnetic Layer with a Vertical Composition Gradient.