Abstract:In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.

Gradient Doping Enables an Extraordinary Efficiency in Thermoelectric PbTe1-xIx

Gradient Dopzing enables an Extraordinary Efficiency in Thermoelectric PbTe1‐xIx

Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics

Directional solidification induced compositional gradient for a quick evaluation of transport properties in p-PbTe thermoelectrics

Thermoelectric Performance Enhancement in Commercial Bi0.5Sb1.5Te3 Materials by Introducing Gradient Cu-Doped Grain Boundaries

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High Thermoelectric Performance of N-Type PbTe1−S Due to Deep Lying States Induced by Indium Doping and Spinodal Decomposition

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Modulation doping promoted ultrahigh electron mobility and enhanced thermoelectric performance in PbTe

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Trace bismuth and iodine co-doping enhanced thermoelectric performance of PbTe alloys

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Origin of the High Performance in GeTe-Based Thermoelectric Materials Upon Bi2Te3 Doping

Promoted Na Solubility and Modified Band Structure for Achieving Exceptional Average ZT by Extra Mn Doping in PbTe.

Decorated dislocations lead to dynamically optimized thermoelectric performance in N-type PbTe

Valence Band Modification and Enhanced Phonon‐Phonon Interactions for High Thermoelectric Performance in GeTe

Fine Tuning of Defects Enables High Carrier Mobility and Enhanced Thermoelectric Performance of N-Type PbTe