Abstract:III-nitride heterostructure-based metal–insulator–semiconductor high-electron-mobility transistors (MIS-HEMTs), compared with Schottky and p-GaN gate HEMTs, have demonstrated significant potential in the next-generation high-power electronic devices due to their exceptional gate reliability. This study presents a comprehensive investigation of threshold voltage (VTH) instability in III-nitride heterostructure-based MIS-HEMTs, with a specific emphasis on the interfaces of the multi-heterostructures. Two widely studied amorphous materials, namely, Al2O3 and SiNx, have been extensively examined as primary gate insulators in GaN-based MIS-HEMTs. To efficiently remove native oxides from the (Al)GaN surface, a novel in situ high-temperature remote plasma pretreatment (RPP) technique has been developed. This technique involves sequential application of NH3/N2 plasmas on the (Al)GaN surface before depositing the gate insulators using plasma-enhanced atomic layer deposition. The remarkable RPP process has proven to be a highly effective method for revealing atomic steps on the GaN surface, irrespective of whether the surface has undergone oxidation or etching processes. To further enhance the interface quality and potentially reduce bulk traps in the gate insulator, optimization of deposition temperature and post-deposition annealing conditions have been explored. Additionally, an electron-blocking layer, such as SiON, is incorporated into the MIS-HEMTs to prevent electron injection into bulk traps within the insulator. Novel characterization techniques including constant-capacitance and isothermal-mode deep-level transient spectroscopy have also been developed to explore the failure mechanisms in MIS-HEMTs. These techniques allow for the differentiation between bulk traps in the GaN epitaxy and those present within the gate insulators. This in-depth physical understanding provides valuable insights into the sources of failure in GaN-based MIS-HEMTs.

1.5-Kv AlGaN/GaN MIS-HEMT with 3-D Stacking Pad-Connected Schottky Structure Demonstrating Radiation Robustness Against Atmospheric Neutrons

Irradiation Hardened <italic>p</italic>-GaN HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV·cm<sup>2</sup>/mg and 95% Conversion Efficiency at 300 W/500 kHz

Irradiation Hardened P-Gan HEMTs Enabling 558 V Single-Event Hardness at 75.7 MeV•cm2/mg and 95% Conversion Efficiency at 300 W/500 Khz

Ultrathin-Body GaN-on-Sapphire HEMT with Megahertz Switching Capability under Prompt Irradiation Dose Rate Exceeding 1010 Rad(si)/s

Simulation Study of Single-Event Burnout in GaN MISFET With Schottky Element

Single Event Burnout Hardening of Enhancement Mode HEMTs With Double Field Plates

Proton-Irradiation Effects and Reliability on GaN-Based MIS-HEMTs

Normally-Off Schottky-Gate P-Gan HEMTs with Enhanced Irradiation Hardness

1.2 kV/25 A Normally off P-N Junction/AlGaN/GaN HEMTs With Nanosecond Switching Characteristics and Robust Overvoltage Capability

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Degradation mechanism of Schottky P-GaN gate stack in GaN power devices under neutron irradiation

Highly Robust P-Gan Gate HEMT with Surge-Energy Ruggedness under Unclamped Inductive Switching and UV Pulse Laser Irradiation

High Performance AlGaN/GaN Power Switch with Si3N4insulation

Demonstration of Avalanche and Surge Current Robustness in GaN Junction Barrier Schottky Diode with 600-V/10-A Switching Capability

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT With in Situ H2/N2 Plasma Pretreatment

Flip-Chip AlGaN/GaN Schottky Barrier Diode Using Buried-Ohmic Anode Structure with Robust Surge Current Ruggedness and Transient Energy Sustaining Capability

Study on the single-event burnout mechanism of p-GaN gate AlGaN/GaN HEMTs

Improving Gate Reliability of 6-in E-Mode GaN-Based MIS-HEMTs by Employing Mixed Oxygen and Fluorine Plasma Treatment

Improved Performance of Fully-Recessed High-Threshold-Voltage GaN MIS-HEMT with in Situ H₂/N₂ Plasma Pretreatment

AlGaN/GaN MIS-HEMTs of Very-Low ${v}_{\sf {{th}}}$ Hysteresis and Current Collapse with In-Situ Pre-Deposition Plasma Nitridation and LPCVD-Si3N4 Gate Insulator

Threshold Voltage Instability in III-nitride Heterostructure Metal–insulator–semiconductor High-Electron-mobility Transistors: Characterization and Interface Engineering