Abstract:Diamond is a material with promising electronics applications but with challenges in effective doping. Cubic boron nitride (cBN), due to its similar lattice structure, is ideal for forming heterostructures with diamond, to modify electronic properties and especially shift the band positions. Here it is demonstrated how integrating cBN layers of finite thickness in diamond can induce an electronic band offset near the polarized diamond-cBN interface. Beyond the direct density functional theory computations, an analytical model is developed for rapid examination of the band offset, for a broad number of crystallographic orientations, in excellent agreement with ab initio calculations. Results show that near [100] and [111] crystal directions, the diamond|cBN|diamond heterostructure displays a 3~4 eV band offset which is expected to facilitate effective modulation doping of diamond.

What problem does this paper attempt to address?

This paper mainly discusses the solution to the problem of effective doping in diamond materials by forming diamond-cubic boron nitride (cBN)-diamond heterostructures. Diamond has been widely used in high-frequency and high-power electronic devices due to its wide bandgap and high carrier mobility, but its doping efficiency is low. The paper points out that due to the close lattice structure of diamond, most elements are difficult to insert effectively for doping. In the study, the authors demonstrate that embedding a finite thickness cBN layer in diamond can induce a bandgap offset, especially in the [100] and [111] crystal directions, which is about 3 to 4 electron volts. This helps achieve effective modulation doping of diamond. The paper not only uses density functional theory (DFT) for direct calculations, but also develops an analytical model based on crystallography and planar capacitors to quickly evaluate the bandgap offset of different crystal orientations, which is in good agreement with the first-principles calculation results. The paper also discusses cBN as an ideal material for forming diamond heterostructures because of its small lattice mismatch with diamond. By integrating a layer of cBN on the hydrogenated diamond surface, an asymmetric charge potential difference can be created, resulting in a high carrier density in the charge transfer region without introducing actual doping atoms. The research results show that C|BN|C heterostructures in the [111] and [100] directions have a larger bandgap offset, making them suitable for achieving n-type and p-type modulation doping. In conclusion, this paper aims to solve the doping problem of diamond materials by introducing a cBN layer and proposes a new method, providing new ideas for the design of diamond-based semiconductor devices.

Electronic band offset in a diamond|cBN|diamond system for modulation doping

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Numerical Parameterization of Chemical-Vapor-Deposited (CVD) Single-Crystal Diamond for Device Simulation and Analysis

First Principles on the Structure and Electronic Properties of Vertically Regulated Two-Dimensional Cubic Boron Nitride and Diamond Like Carbon Sandwich Heterostructures

Tuning Band Gap and Work Function Modulations in Monolayer hBN/Cu(111) Heterostructures with Moiré Patterns.

High elastic moduli, controllable bandgap and extraordinary carrier mobility in single-layer diamond

Two-dimensional Ambipolar Carriers of Giant Density at the Diamond/cubic-BN (111) Interfaces: Toward Complementary Logic and Quantum Applications

Twist angle modulated electronic properties and band alignments of hydrogen-terminated diamond (1 1 1)/hexagonal boron nitride heterostructures

Interface engineering of multilayer cubic boron nitride terminated diamond (111): Rational regulation of Au/diamond Schottky barriers for ambipolar applications

Nitrogen Modulation of Boron Doping Behavior for Accessible N-Type Diamond

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

First principles study of structural, electronic and vibrational properties of heavily boron-doped diamond

First-Principles Calculation to N-type Beryllium Related Co-doping and Beryllium Doping in Diamond.

Predicting the electronic and mechanical properties of 2D diamond-like carbon and cubic boron nitride intercalated structures

First-principle Approach Based Bandgap Engineering for Cubic Boron Nitride Doped with Group IIA Elements

Theoretical investigations of the heavily boron doped pentadiamond

Phonon- and defect-limited electron and hole mobility of diamond and cubic boron nitride: A critical comparison

BN-embedded monolayer graphene with tunable electronic and topological properties

Tunable electronic properties of diamond (100) surface via boron-nitrogen co-termination: A first-principles study