Abstract:In-plane heterostructure of hexagonal boron nitride and graphene (h-BN-G) has become a research focus of graphene due to its predicted fascinating properties such as bandgap opening and magnetism, which hence has ignited the attempt of experimentally growing such in-plane two-dimensional (2D) hybrid materials. Many previous researches demonstrated the synthesis of such heterostructures on Cu foils via chemical vapor deposition (CVD) process. The obtained 2D hybrid materials would offer a possibility for fabricating atomically thin electronic devices. However, many fundamental issues are still unclear, including the in-plane atomic continuity, the edge type, and the electronic properties at the boundary of hybridized h-BN and graphene domain. To clarify these issues, we report the syntheses of h-BN-G monolayer heterostructures on strongly coupled Rh(111) substrate and weakly coupled Ir(111) substrate via a two-step growth process in an ultrahigh vacuum (UHV) system, respectively. With the aid of scanning tunneling microscopy (STM), it is revealed that graphene and h-BN could be linked together seamlessly on an atomic scale at the linking boundaries. More importantly, we find that the atomically sharp zigzag-type boundaries dominate the patching interface between graphene and h-BN as demonstrated by atomic-scale STM images. To understand the physical origin of the atomic linking of the h-BN-G heterostructures, we also perform density functional theory (DFT) calculations, including geometry optimizations and binding energy calculations for different kinds of linking interfaces. The calculated results reconfirm that graphene prefers to grow on the h-BN domain edges and form zigzag linking boundaries. Besides the atomic structures on the linking interfaces, the electronic characteristics are also of particular importance. It is worth noting that the substrates coupled strongly with graphene by pi-d orbital hybridization (such as Rh(111) and Ru(0001)), lead to downward shift of graphene pi-bands away from the Fermi level, or decay of the intrinsic electronic structure of graphene. In this regard, the influence of h-BN on the electronic property of graphene is hard to identify on such h-BN-G heterostructures. The weakly coupled Ir(111) is chosen to be a perfect substrate to investigate the interface electronic properties of h-BN-G heterostructure due to the absence of substrate electronic doping effect. Scanning tunneling spectroscopy studies indicate that the graphene and h-BN tend to exhibit their own intrinsic electronic features near the linking boundaries on Ir(111). Therefore, the present work offers a deep insight into the h-BN-G boundary structures and the effect of adlayer-substrate coupling both geometrically and electronically.

The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface

Atomic-Precision Fabrication of Quasi-Full-Space Grain Boundaries in Two-Dimensional Hexagonal Boron Nitride.

Grain Boundaries in Chemical-Vapor-deposited Atomically Thin Hexagonal Boron Nitride

Interface Engineering Of Electronic Properties Of Graphene/Boron Nitride Lateral Heterostructures

Electronic properties of c-BN/diamond heterostructures for high-frequency high-power applications

Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain

Theoretical study of the interface engineering for H-diamond field effect transistors with h-BN gate dielectric and graphite gate

First Principles on the Structure and Electronic Properties of Vertically Regulated Two-Dimensional Cubic Boron Nitride and Diamond Like Carbon Sandwich Heterostructures

Electronic band offset in a diamond|cBN|diamond system for modulation doping

Molecular Dynamics Study of Thermal Transport across Diamond/Cubic Boron Nitride Interfaces

Interface Electronic Structure and the Schottky Barrier at Al-Diamond Interface: Hybrid Density Functional Theory Hse06 Investigation

Predicting the electronic and mechanical properties of 2D diamond-like carbon and cubic boron nitride intercalated structures

Hexagonal Boron Nitride–Graphene Heterostructures: Synthesis and Interfacial Properties

An Atomistic Approach for the Structural and Electronic Properties of Twisted Bilayer Graphene-Boron Nitride Heterostructures

Electronic Properties of Phosphorene/Graphene and Phosphorene/Hexagonal Boron Nitride Heterostructures

Interface engineering of multilayer cubic boron nitride terminated diamond (111): Rational regulation of Au/diamond Schottky barriers for ambipolar applications

Two-dimensional Ambipolar Carriers of Giant Density at the Diamond/cubic-BN (111) Interfaces: Toward Complementary Logic and Quantum Applications

Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures

Tunable electronic properties of diamond (100) surface via boron-nitrogen co-termination: A first-principles study

Structural, electronic, and optical properties of periodic graphene/h-BN van der Waals heterostructures

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures