Abstract:The observation of novel physical phenomena such as Hofstadter's butterfly, topological currents and unconventional superconductivity in graphene have been enabled by the replacement of SiO$_2$ with hexagonal Boron Nitride (hBN) as a substrate and by the ability to form superlattices in graphene/hBN heterostructures. These devices are commonly made by etching the graphene into a Hall-bar shape with metal contacts. The deposition of metal electrodes, the design and specific configuration of contacts can have profound effects on the electronic properties of the devices possibly even affecting the alignment of graphene/hBN superlattices. In this work we probe the strain configuration of graphene on hBN contacted with two types of metal contacts, two-dimensional (2D) top-contacts and one-dimensional (1D) edge-contacts. We show that top-contacts induce strain in the graphene layer along two opposing leads, leading to a complex strain pattern across the device channel. Edge-contacts, on the contrary, do not show such strain pattern. A finite-elements modelling simulation is used to confirm that the observed strain pattern is generated by the mechanical action of the metal contacts clamped to the graphene. Thermal annealing is shown to reduce the overall doping whilst increasing the overall strain, indicating and increased interaction between graphene and hBN. Surprisingly, we find that the two contacts configurations lead to different twist-angles in graphene/hBN superlattices, which converge to the same value after thermal annealing. This observation confirms the self-locking mechanism of graphene/hBN superlattices also in the presence of strain gradients. Our experiments may have profound implications in the development of future electronic devices based on heterostructures and provide a new mechanism to induce complex strain patterns in 2D materials.

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Tuning the electronic properties and band offset of h-BN/diamond mixed-dimensional heterostructure by biaxial strain

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Tunable Interband Transitions in Twisted H-Bn/graphene Heterostructures

Tunable Interband Transitions in Twisted Heterostructures

Twisted angle modulated structural property, electronic structure and carrier transport of MoS2/AlN(0001) mixed-dimensional van der Waals heterostructure

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Substrate Doping Effect and Unusually Large Angle Van Hove Singularity Evolution in Twisted Bi- and Multilayer Graphene.

Strain-engineering of twist-angle in graphene/hBN superlattice devices

Non-linear optics at twist interfaces in h-BN/SiC heterostructures

Twist-assisted optoelectronic phase control in two-dimensional (2D) Janus heterostructures

Long Range Piezoelectricity Effects in van der Waals Heterobilayer Systems beyond 1000 Atoms

Progress on Band Structure Engineering of Twisted Bilayer and Two-Dimensional Moiré Heterostructures*

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Bridging the small and large in twisted transition metal dicalcogenide homobilayers: a tight binding model capturing orbital interference and topology across a wide range of twist angles

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A twist for tunable electronic and thermal transport properties of nanodevices