<italic>S</italic>-Band Micromechanical Resonant Impedance Transformers Based on Aluminum Nitride FBARs
Yan-Ming Huang,Chin-Yu Chang,Tzu-Hsuan Hsu,Yenshih Ho,Yung-Hsiang Chen,Yelehanka R. Pradeep,Rakesh Chand,Sheng-Shian Li,Weileun Fang,Ming-Huang Li
DOI: https://doi.org/10.1109/tmtt.2023.3263390
IF: 4.3
2023-01-01
IEEE Transactions on Microwave Theory and Techniques
Abstract:This work presents an intensive study of passive voltage amplification offered by one-port microelectromechanical systems (MEMS) piezoelectric resonators used as matching network (MN) in
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-band RF wake-up receiver (WuRX) front-ends. Through theoretical modeling and numerical analysis, a large electromechanical coupling coefficient (
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), high quality factor (
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), low transducer capacitance (
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), and light capacitive loading (
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) are the keys to obtain high passive voltage gain at gigahertz (GHz) frequencies. To evaluate the performance of GHz MEMS-based MNs, several thin-film bulk acoustic wave resonators (FBARs) with different transducer capacitances at 2.3 GHz were designed and fabricated using a 200-mm commercial aluminum nitride (AlN) piezoelectric MEMS-CMOS process. The fabricated resonators achieve a high figure-of-merit (FoM =
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) from 90 to 175, resulting in a high passive gain of around 21 dB at a reasonable reactive load of 100 fF. Based on a small FBAR device with a
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of only 67 fF, the highest gain achieved in this study is 23.4 dB based on a complex load (
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fF and
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) while attaining good input matching (
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dB). In addition, the effect of spurious modes on the passive voltage gain is numerically investigated by the 2-D finite element method (FEM), which is in good agreement with the experimental results.