Abstract:Actomic layer deposition processed SnOx is introduced as electron transport layer in Sb2Se3 thin‐film solar cells. An additional post‐annealing can remarkably enhance the photovoltaic performance, thanks to the optimized carrier dynamics under simultaneously improving the properties of SnOx, Sb2Se3/SnOx heterojunction and Sb2Se3 absorber layer. A stimulating efficiency of 7.39% represents the record value for Cd‐free substrate structured Sb2Se3 solar cells. Antimony selenide (Sb2Se3) is a highly promising photovoltaic material thanks to its outstanding optoelectronic properties, as well as its cost‐effective and eco‐friendly merits. However, toxic CdS is widely used as an electron transport layer (ETL) in efficient Sb2Se3 solar cells, which largely limit their development toward market commercialization. Herein, an effective green Cd‐free ETL of SnOx is introduced and deposited by atomic layer deposition method. Additionally, an important post‐annealing treatment is designed to further optimize the functional layers and the heterojunction interface properties. Such engineering strategy can optimize SnOx ETL with higher nano‐crystallinity, higher carrier density, and less defect groups, modify Sb2Se3/SnOx heterojunction with better interface performance and much desirable "spike‐like" band alignment, and also improve the Sb2Se3 light absorber layer quality with passivated bulk defects and prolonged carrier lifetime, and therefore to enhance carrier separation and transport while suppressing non‐radiative recombination. Finally, the as‐fabricated Cd‐free Mo/Sb2Se3/SnOx/ITO/Ag thin‐film solar cell exhibits a stimulating efficiency of 7.39%, contributing a record value for Cd‐free substrate structured Sb2Se3 solar cells reported to date. This work provides a viable strategy for developing and broadening practical applications of environmental‐friendly Sb2Se3 photovoltaic devices.

Simultaneous Band Alignment Modulation and Carrier Dynamics Optimization Enable Highest Efficiency in Cd‐Free Sb2Se3 Solar Cells

Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd-Free Sb2 Se3 Thin-Film Solar Cells.

Electron Transport Layer Engineering Induced Carrier Dynamics Optimization for Efficient Cd‐Free Sb2Se3 Thin‐Film Solar Cells

Heterojunction Interface Engineering of C60 Electron Transport Layer Insertion Enables Efficient Cd-Free Sb2se3 Solar Cells

Analysis and Design of 25.3% Efficient Sb2Se3 Solar Cells by Numerical Simulation

Energy Band Alignment for Cd-free Antimony Triselenide Substrate Structured Solar Cells by Co-sputtering ZnSnO Buffer Layer

Remarkable Cd-free Sb<sub>2</sub>Se<sub>3</sub> solar cell yield achieved by interface band-alignment and growth orientation screening

Hydrazine Hydrate‐Induced Surface Modification of CdS Electron Transport Layer Enables 10.30%‐efficient Sb2(S,Se)3 Planar Solar Cells

Carrier Transport Enhancement Mechanism in Highly Efficient Antimony Selenide Thin‐Film Solar Cell

Double Interface Modification Promotes Efficient Sb2Se3 Solar Cell by Tailoring Band Alignment and Light Harvest

Regulating Energy Band Alignment via Alkaline Metal Fluoride Assisted Solution Post‐Treatment Enabling Sb <sub>2</sub> (S,Se) <sub>3</sub> Solar Cells with 10.7% Efficiency

Regulating Energy Band Alignment Via Alkaline Metal Fluoride Assisted Solution Post‐Treatment Enabling Sb2(S,Se)3 Solar Cells with 10.7% Efficiency

Suppressing Buried Interface Nonradiative Recombination Losses Toward High-Efficiency Antimony Triselenide Solar Cells

Regulating Energy Band Alignment via Alkaline Metal Fluoride Assisted Solution Post‐Treatment Enabling Sb 2 (S,Se) 3 Solar Cells with 10.7% Efficiency

Interface Etching Leads to the Inversion of the Conduction Band Offset Between the CdS/Sb2Se3 Heterojunction and High-Efficient Sb2Se3 Solar Cells

Suppressing Buried Interface Nonradiative Recombination Losses Towards High‐efficiency Antimony Triselenide Solar Cells

High-efficient Sb 2 Se 3 solar cell using Zn x Cd 1- x S n-type layer

Stable and Efficient CdS/Sb2Se3 Solar Cells Prepared by Scalable Close Space Sublimation

InCl3-modified SnO2 as Electron Transporting Layer for Cd-free Antimony Selenide solar cells

Bandgap Tunable CdS:O As Efficient Electron Buffer Layer for High-Performance Sb2Se3 Thin Film Solar Cells

InCl3-modified SnO2 As an Electron Transporting Layer for Cd-free Antimony Selenide Solar Cells