Abstract:Devices based on 2DM van der Waals heterostructures always compose of multiple contacts and are instable during operation. Indium selenide (InSe) and black phosphorus (BP) on Au electrodes exhibit variation of I–V characteristics due to the evolution and rearrangement of junctions. This research emphasizes the importance of dealing with heterogeneous contacts and junction directions in designing 2DM heterostructure photodetectors. Devices based on 2DMs van der Waals (vdW) heterostructures always compose of multiple contacts. Due to the instability of nanoscale 2DMs and interfaces, these contacts can be affected by the operation‐induced photo or thermal effect. They can trigger the evolution of junctions and rearrange the junctions across a device, which are detrimental for applications. Herein, vdW heterostructure of indium selenide (InSe) and black phosphorus (BP) on Au electrodes are investigated to reveal the contact evolution and its relation to device performance. During operation, light irradiation changes the I–V characteristics from symmetry to strong rectification. Photocurrent mapping and Kelvin‐probe force microscopy (KPFM) reveal triple junctions in this heterostructure, i.e., Au‐InSe junction, InSe homojunction, and InSe‐BP heterojunction. The variation of I–V characteristics of vdW heterostructure is ascribed to the evolution of Au‐InSe junction from quasi‐ohmic junction with a near‐zero work function difference (Δφ) to a strong Schottky junction (Δφ = ≈0.27 eV). The stabilized device demonstrates distinguished time‐domain response at individual junctions and overall device, indicating the evolution of contacts and the consequent opposite junction directions degrade the overall device performance. This research emphasizes the importance of dealing with heterogeneous contacts and junction directions in designing vdW heterostructure photodetectors.

Vacancy-induced Giant Photogalvanic Effect in TiSe2 Heterojunctions

Unusual defect properties of the one-dimensional photovoltaic semiconductor selenium

Calculated Effects of Vacancy and Ti-doping in 2D Janus MoSSe for Photocatalysis

Defect Physics of the Quasi-Two-dimensional Photovoltaic Semiconductor GeSe

Native Pb vacancy defects induced p-type characteristic in epitaxial monolayer PbSe

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device

Strong Photodetection Enhancement of Quasi-2D Transistor Through Defect Engineering

Effects of doping Ti, Nb, Ni on the photoelectric properties of monolayer 2H–WSe2

Synergizing between interband/intraband defect states in prolonging charge carrier lifetime of InSe/SiH heterojunction

Enhanced photogalvanic effect in Janus PtSSe-HfSSe lateral heterojunctions

Photoinduced Contact Evolution and Junction Rearrangement in Two‐Dimensional van der Waals Heterostructure

Structure, Stability, and Kinetics of Vacancy Defects in Monolayer PtSe2: A First-Principles Study

Probing the photocurrent in two-dimensional titanium disulfide

Vacancy-defect Semiconductor Quantum Dots Induced an S-scheme Charge Transfer Pathway in 0D/2D Structures under Visible-Light Irradiation

Asymmetric photoelectric effect: Auger-assisted hot hole photocurrents in transition metal dichalcogenides

Bandgap Engineering of Two-Dimensional Double Perovskite Cs4AgBiBr8/WSe2 Heterostructure from Indirect Bandgap to Direct Bandgap by Introducing Se Vacancy

High-responsivity PtSe2 photodetector enhanced by photogating effect

WSe2/2D electron gas heterojunction on KTaO3 for room-temperature giant photoconductivity

Synthesis of Ultrathin Bi2Se3 Nanosheets/graphene Nanocomposite with Defects/vacancies-Dependent Transient Photocurrent Performance

Spatial homojunction of titanium vacancies decorated oxygen vacancies in TiO2 and its directed charge transfer