Effects of doping Ti, Nb, Ni on the photoelectric properties of monolayer 2H–WSe2

Zhong-Hui Xu,Zhen Chen,Qiu-Ming Yuan
DOI: https://doi.org/10.1016/j.physe.2021.114846
2021-09-01
Abstract:<p>The photocurrent of Ti, Nb, Ni substitution-doped monolayer 2H–WSe<sub>2</sub> is calculated by the first-principles method based on the Keldysh nonequilibrium Green's function-density functional theory. The photogalvanic effect(PGE) photocurrent can be generated in the monolayer 2H–WSe<sub>2</sub> under the vertical irradiation of linear polarized light, However, it is generally very small. Calculation results show that the Nb and Ti-doped systems exhibit the characteristics of semi-metal, while the Ni-doped system tends to transform into metals. The substitutional doping of Nb, Ti, and Ni atoms can effectively enhance the photocurrent and the polarization sensitivity of monolayer 2H–WSe<sub>2</sub>.This excellent performance is mainly attributed to the fact that the doping introduces multiple impurity energy bands crossing the Fermi energy level, which becomes a bridge for electronic transitions, thus effectively enhancing the photocurrent.</p>
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