Chemical characterization of a novel peptide from the neuroendocrine light yellow cells of Lymnaea stagnalis.

R. Hoek,K. W. Li,J. van Minnen,W. Geraerts

DOI: https://doi.org/10.1016/0169-328X(92)90195-H

1992-11-01

Abstract:

What problem does this paper attempt to address?

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

S. Lu,C. Li,H. H. Li,Y. F. Zhao,Y. Y. Gong,L. Y. Niu,X. J. Liu,T. Wang

DOI: https://doi.org/10.1016/j.apsusc.2016.09.136

IF: 6.7

2017-01-01

Applied Surface Science

Abstract:Doping is an effective means to alter the electronic behavior of materials by forming new chemical bond and relaxing the surrounding chemical bonds. With the aid of first-principle studies, the effects of a series of nonmetal (NM) dopants on the geometric, thermodynamic, electronic and optical performances of monolayer g-C3N4 have been investigated. Results shown that, all considered NM atoms except Br and I atoms can be introduced into the monolayer g-C3N4 on account of the thermal stability, the super cell parameter and film thickness have been altered by the newly formed C NM bonds and the relaxed chemical bonds around them, which have affected their electronic structure. The band gap values were altered less than 0.14 eV. The optical absorption edge (and intensity) in visible light of all doped specimens red-shift 10-75 nm (and increase about 14%-71%) except for O- and S-doped specimens, and thus the NM dopants can enhance the visible-light response capability. Moreover, the highest occupied molecular orbital and lowest unoccupied molecular orbital of H-, B-, O-, S-, F- and As-doped specimens have been separated adequately, it can effectively separate the photogenerated e-/h+ pairs and enhance the photocatalytic efficiency. Finally, we have confirmed six high efficiency monolayer g-C3N4 based photocatalysts by doping H, B, O, S, F and As atoms. (C) 2016 Elsevier B.V. All rights reserved.
Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Yu Gao,Xiaodong Pi,Xunhai Wang,Tianhao Yuan,Qingjun Jiang,Ryan Gresback,Jianguo Lu,Deren Yang

DOI: https://doi.org/10.1002/ppsc.201600016

IF: 3.467

2016-01-01

Particle & Particle Systems Characterization

Abstract:The doping of semiconductor nanocrystals (NCs) is crucial for the optimization of the performance of devices based on them. In contrast to recent progress on the doping of compound semiconductor NCs and silicon NCs, the doping of germanium (Ge) NCs has lagged behind. Here it is shown that Ge NCs can be doped with phosphorus (P) during synthesis by a nonthermal plasma. It is found that there are more P atoms in the NC near‐surface region than in the NC core. P doping modifies the surface state of Ge NCs. Compressive strain can be incuced in Ge NCs by P which can explain the P‐doping‐enhanced oxidation resistance of Ge NCs. Stable dispersions of P‐doped Ge NCs in acetonitrile can be cast to produce films for field‐effect transistors (FETs). FET analysis shows that the electrical conductivity and electron mobility of a Ge‐NC film increase with the increase of the P doping level, although the electrical activation efficiency of P in the Ge‐NC film is low. Finally, atomic layer deposition of aluminum oxide at the surface of P‐doped Ge NCs is shown to improve the performance of the FETs.
Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Y. Lambert,Y. Gao,X.D. Pi,B. Grandidier,D. Stiévenard

DOI: https://doi.org/10.1016/j.physe.2017.05.018

2017-01-01

Physica E: Low-Dimensional Systems and Nanostructures

Abstract:We investigate the photoconductivity of a n+-ZnO/n-Ge NCs/p+-GaAs junction where the active layer consists of heavily n-doped Ge NCs synthesized in the gas phase. Measurement of a significant current at energies smaller than the band gap of GaAs demonstrates the photogeneration of charge carriers by the Ge NCs. From the correlation of the NC size with the absorption threshold, a narrowing of the direct band gap in the Ge NC thin film is obtained and attributed to the heavy doping of the Ge NCs. A remarkably high electrical activation of ~15% is found for the incorporated P impurities in the NCs.
Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Mahdieh Yousefi,Monireh Faraji,Reza Asgari,Alireza Z. Moshfegh

DOI: https://doi.org/10.1103/PhysRevB.97.195428

2018-06-04

Abstract:We study the effect of boron (B) and Phosphorous (P) co-doping on electronic and optical properties of graphitic carbon nitride (g-C$_3$N$_4$ or GCN) monolayer using density functional simulations. The energy band structure indicates that the incorporation of B and P into a hexagonal lattice of GCN reduces the energy band gap from $3.1$ for pristine GCN to $1.9$ eV, thus extending light absorption toward the visible region. Moreover, on the basis of calculating absorption spectra and dielectric function, the co-doped system exhibits an improved absorption intensity in the visible region and more electronic transitions, which named $\pi^*$ electronic transitions that occurred and were prohibited in the pristine GCN. These transitions can be attributed to charge redistribution upon doping, caused by distorted configurable B/P co-doped GCN confirmed by both electron density and Mulliken charge population. Therefore, B/P co-doped GCN is expected to be an auspicious candidate to be used as a promising photoelectrode in Photoelectrochemical water splitting reactions leading to efficient solar H$_2$ production.

Materials Science,Mesoscale and Nanoscale Physics
Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

Zheng Shu,Yongqing Cai

DOI: https://doi.org/10.1039/D0TC03272G

2022-01-28

Abstract:Layered chalcogenide materials have a wealth of nanoelectronics applications like resistive switching and energy-harvesting such as photocatalyst owing to rich electronic, orbital, and lattice excitations. In this work, we explore monochalcogenide germanium selenide GeSe with respect to substitutional doping with 13 metallic cations by using first-principles calculations. Typical dopants including s-shell (alkali elements Li and Na), p-shell (Al, Pb and Bi), 3d (Fe, Cu, Co and Ni), 4d (Pd and Ag) and 5d (Au and Pt) elements are systematically examined. Amongst all the cationic dopants, Al with the highest oxidation states, implying a high mobility driven by electric field, and Al-doped GeSe may be a promising candidate for novel resistive switching devices. We show that there exist many localized induced states in the band gap of GeSe upon doping Fe, Co, or Ni, while for Cu, Ag, and Au cases there is no such states in the gap. The Ag and Cu are + 0.27 and + 0.35 charged respectively and the positive charges are beneficial for field-driven motion in GeSe. In contrast, Au is slightly negatively charged renders Au-doped GeSe a promising photocatalyst and enhanced surface plasmon. Moreover, we explore the coexistence of dopant and strain in GeSe and find dynamical adjustments of localized states in GeSe with levels successive shifting upward/downward with strain. This induces dynamic oxidative states of the dopants under strain which should be quite popular in composites where motion of metal adatoms causes significant deformation.

Materials Science
The stability, electronic and optical properties of nonmetal doped g-GaN:a first-principles calculation

Aiyu Yang,Wenjing Hu

DOI: https://doi.org/10.1016/j.ssc.2024.115695

IF: 1.934

2024-09-14

Solid State Communications

Abstract:Doping is an effective strategy to modulate the electronic performance of materials by forming new chemical bonds and relaxing the neighboring bonds, which may change catalytic performance of materials. Herein, we demonstrate the effects of a series of nonmetal (NM) dopants on the electronic properties and photocatalytic activity of g-GaN monolayer using first-principle calculations. NM dopants prefer to substitute N atom under Ga-rich condition. C, O and F doped specimens are highly stable under both Ga-rich and N-rich conditions. NM dopants induce the generation of impurity levels, contributing to reduce the electronic transition energies. S, Se and Te doped specimens increase by about 11, 8 and 4 times for absorption intensity in the region of visible light, respectively. Remarkably, S, Cl, Se, Br, Te and I dopants can effectively decrease the recombination rate of photogenerated electrons and holes of the g-GaN in photocatalytic reaction. H, B, C Si, P and As doped system can induce more active sites. Remarkably, halogen dopants could increase the both redox and reduction ability of g-GaN monolayer. Thus, NM dopants can effectively tune redox potential of g-GaN monolayer and improve its photocatalytic performance.

physics, condensed matter
Significantly enhanced photocatalytic performance of the N-doped GeP3 monolayer: A first-principles study

Xin Yang,Yanqing Shen,Jiajia Liu,Xianghui Meng,Xu Gao,Lingling Lv,Min Zhou,Xinyu Wang,Yangdong Zheng,Zhongxiang Zhou

DOI: https://doi.org/10.1016/j.apsusc.2021.150628

IF: 6.7

2021-11-01

Applied Surface Science

Abstract:The GeP3 monolayer has been theoretically calculated as a potential photocatalytic material since its high carrier mobility. However, the narrow band gap (0.55 eV) results in its actual photocatalytic effect may not be as expected. Here, by using the first-principles calculation, the structural, electronic, and optical properties of N-doped GeP3 monolayer have been studied. In sharp contrast to the pristine GeP3 monolayer, N-doped GeP3 monolayer displays suitable band gap, excellent visible light absorption property and carrier mobility, which allows N-doped GeP3 monolayers to act as promising photocatalysts for driving hydrogen evolution reaction. For the 31.25% N-doped GeP3 monolayer, it has been recorded a tunable band gap (1.143 eV), superior light absorption coefficients (~3.5 × 105 cm−1) and electron mobility (6769.49 cm2 V−1 s−1). Theoretical calculations reveal that the band gap structure and light absorption performance can be operatively adjusted by employing strain engineering or electric field. These results provide an effective way for improving the highly active photocatalytic performance of the GeP3 monolayer.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

Fu Yin,Hui Wang,Zhengqin Zhao,LiJia Luo,Yongliang Tang,Yanbo Zhang,Qiang Xue

DOI: https://doi.org/10.1039/d4cp01836b

IF: 3.3

2024-01-01

Physical Chemistry Chemical Physics

Abstract:The electronic, optical and photocatalytic properties of GaN/C2N van der Waals heterostructures are investigated using the first-principles theory, and effective regulation through element doping or strain is achieved further. The results show that the GaN/C2N heterostructure exhibits a type-II band alignment with an indirect band gap of 2.25 eV, which benefits photocatalytic water splitting. In this study, both type-I and type-II band alignments can be obtained through doping or strain modulation. Doping with P or As atoms reduces the band gap of the GaN/C2N heterostructure and transforms it to a type-I direct bandgap semiconductor, which makes the doped GaN/C2N heterostructure more suitable for optoelectronic devices. In addition, the GaN/C2N heterostructure retains type-II band alignment and has a decreased band gap under tensile strain (0 to +4%), which is more favorable for photocatalytic water splitting. Compressive strain (0 to -4%) converts the type-II band alignment to type-I, resulting in a wider light absorption range, making the GaN/C2N heterostructure more suitable for optoelectronic devices. These theoretical results are helpful for the design of GaN/C2N vdW heterostructures in the fields of optoelectronic devices and photocatalysts.
First-principles study of S-doped point defects with different charge states in monolayer g-C3N4

Jie Li,Zhifeng Li,Jie Tan,Yuan Meng,Yong Lu,Tingting Zhang

DOI: https://doi.org/10.1016/j.apsusc.2021.149601

IF: 6.7

2021-07-01

Applied Surface Science

Abstract:Non-metal-doped graphitic carbonitride (g-C3N4) can improve the redox capacity and photocatalytic activity, as a photocatalyst for the degradation of organic pollutants. In the present study, the theoretical defect models of S-doping with different doping sites and valence states were built in g-C3N4. The stability of charged defects was systematically investigated by the first-principles calculations based on the density functional theory. The effects of S-doping on the electronic structures and optical properties of g-C3N4 were revealed. According to the results, the g-C3N4 doped with positive divalent S is the most favorable defect form in energy. A new electron transfer pathway between adjacent heptazine rings on S-doped g-C3N4 was proposed. It is found that the special electronic states and the enhanced local charge density of S-doped g-C3N4 could effectively optimize the electron transport dynamic, leading to the increased reduction ability of photo-generated holes. As a result, the S-doped g-C3N4 shows better ability to separate photo-generated electron/hole pairs and improve photocatalytic efficiency with respect to the pristine g-C3N4.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
Band Engineering of Carbon Nitride Monolayers by N-type, P-type, and Isoelectronic Doping for Photocatalytic Applications

Meysam Makaremi,Sean Grixti,Keith T. Butler,Geoffrey A. Ozin,Chandra Veer Singh

DOI: https://doi.org/10.48550/arXiv.1803.07970

2018-03-21

Computational Physics

Abstract:Since hydrogen fuel involves the highest energy density among all fuels, production of this gas through the solar water splitting approach has been suggested as a green remedy for greenhouse environmental issues due to extensive consumption of fossil fuels. Low dimensional materials possessing a large surface-to-volume ratio can be a promising candidate to be used for the photocatalytic approach. Here, we used extensive first principles calculations to investigate the application of newly fabricated members of two dimensional carbon nitrides including tg-C3N4, hg-C3N4, C2N, and C3N for water splitting. Band engineering via n-type, p-type, and isoelectronic doping agents such as B, N, P, Si, and Ge was demonstrated for tuning the electronic structure; optimizing solar absorption and band alignment for photocatalysis. Pristine tg-C3N4, hg-C3N4, and C2N crystals involve bandgaps of 3.190 eV, 2.772 eV, and 2.465 eV, respectively, which are not proper for water splitting. Among the dopants, Si and Ge dopants can narrow the band gap of carbon nitrides about 0.5 - 1.0 eV, and also increase their optical absorption in the visible spectrum. This study presents the potential for doping with isoelectronic elements to greatly improve the photocatalytic characteristics of carbon nitride nanostructures.
Adjustable Photocatalytic Ability of Monolayer G-C3n4 Utilizing Single–metal Atom: Density Functional Theory

Huanhuan Li,Yong Wu,Lei Li,Yinyan Gong,Lengyuan Niu,Xinjuan Liu,Tao Wang,Changqing Sun,Can Li

DOI: https://doi.org/10.1016/j.apsusc.2018.06.298

IF: 6.7

2018-01-01

Applied Surface Science

Abstract:Single-atom catalysis is an effective method to improve the catalytic efficiency. With the aid of density functional theory calculations, we investigated the thermodynamic performances during water splitting besides the structural and electronic performances of monolayer g-C3N4 embedded with single Ni, Pd, Pt, Cu, Ag or Au atom. Based on the detailed analysis of the electronic redistributions and chemical bond relaxations, the ratio of ionic and covalent bonding parts of chemical bonds were adjusted by the single atoms, it changed the adsorption energy of intermediates, the free energy changes during reaction and then the overpotentials of oxidation evolution reaction (OER) and hydrogen evolution reaction (HER). Interestingly, the overpotentials of OER and HER reduce as the percentage of covalent bonding parts is close to a certain value, which are conducive to improve the OER and HER efficiency. In addition, the differences of redox potentials between catalysts and water oxidation/H+ reduction are larger than the corresponding overpotentials of OER and HER on Pd-1/ and Pt-1/g-C3N4, thus the OER and HER can happen on them.
Effects of Germanium Doping on the Microstructure and Photoelectrochemical Properties of TiO2 Films by Sol-Gel Method

ZHOU Jing,ZHAO Gao-ling,HAN Gao-rong

DOI: https://doi.org/10.3321/j.issn:1001-9731.2009.12.016

2009-01-01

Journal of Functional Biomaterials

Abstract:Photoelectrochemical(PEC) solar cells have attracted considerable attention as one of the most effective ways to utilize solar energy.As a cheap and stable semiconductor material,TiO_2 has been frequently used in the PEC solar cells.Doping is one of the most effective ways to enhance the photoelectrochemical properties of TiO_2 thin film electrodes.So far,many efforts have been made to synthesize doped TiO_2 photoelectric films to develop the photoelectrochemical performance.In this study,germanium doped TiO_2 thin films have been synthesized by sol-gel dip-coating method using butyl titanate(Ti(OC4H9)4) and tetra-n-butoxygermane(Ge[O(CH2)3CH3]4) as the titania and germania precursors,respectively.X-ray powder diffraction(XRD),scanning electron microscope(SEM) attached with energy dispersive X-ray spectroscopy(EDS),optical absorption spectra,and current-potential(I-V) curves have been studied for the prepared Ge-doped TiO_2 thin films.The results revealed that Ti1-xGexO2 solid solution formed when x=0.10,while the film exists amorphous when x=0.15.The anatase crystal structure was destroyed gradually with increasing germanium amount.Doping germanium reduced the grain size.The surface morphology of Ge-doped films showed higher particle density than that of pure TiO_2,hence increasing the active site numbers and improving the photoelectrochemical properties.The increase of Ge amount caused a gradual blue shift of optical absorption edge in UV-Vis absorption spectra.The photocurrent was enhanced with proper doping amount,owing to more active sites and comparatively better crystallinity.The maximum value of photocurrent reached 17A/m2 when germanium amount was 0.05.The mechanism of effects of Ge-doping on the photocurrent of TiO_2 thin film electrodes was also investigated.
Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Fu Yin,Hui Wang,Zhengqin Zhao,LiJia Luo,Yongliang Tang,Yanbo Zhang,Qiang Xue

DOI: https://doi.org/10.1039/d4cp01836b

IF: 3.3

2024-05-24

Physical Chemistry Chemical Physics

Abstract:The electronic, optical and photocatalytic properties of GaN/C2N van der Waals heterostructures are investigated using the first-principle theory, and further the effective regulation through element doping or strain are achieved. The results show that GaN/C2N heterostructure exhibits a type-II band alignment with an indirect band gap of 2.25 eV, which benefits to the photocatalytic water splitting. In this paper, both type-I and type-II band alignments can be obtained through doping or strain modulation. Doping with P or As atom reduces the band gap of GaN/C2N heterostructure and transforms it to the type-I direct bandgap semiconductor, which makes the doped GaN/C2N heterostructure more suitable for optoelectronic devices. In addition, GaN/C2N heterostructure remains type-II band alignment and has a decreased band gap under tensile strains (0~+4%), which is more favorable for photocatalytic water splitting. Compressive strain (0~-4%) converts the type-II band alignment to type-I, resulting in a wider light absorption range, making GaN/C2N heterostructure more suitable for optoelectronic devices. These theoretical results are helpful for the design of GaN/C2N vdW heterostructure in the field of optoelectronic devices and photocatalysts.

chemistry, physical,physics, atomic, molecular & chemical
Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Fu Yin,Hui Wang,Zhengqin Zhao,Lijia Luo,Yongliang Tang,Yanbo Zhang,Qiang Xue

DOI: https://doi.org/10.1039/d4cp01836b

IF: 3.3

2024-01-01

Physical Chemistry Chemical Physics

Abstract:The electronic, optical and photocatalytic properties of GaN/C2N van der Waals heterostructures are investigated using the first-principles theory, and effective regulation through element doping or strain is achieved further. The results show that the GaN/C2N heterostructure exhibits a type-II band alignment with an indirect band gap of 2.25 eV, which benefits photocatalytic water splitting. In this study, both type-I and type-II band alignments can be obtained through doping or strain modulation. Doping with P or As atoms reduces the band gap of the GaN/C2N heterostructure and transforms it to a type-I direct bandgap semiconductor, which makes the doped GaN/C2N heterostructure more suitable for optoelectronic devices. In addition, the GaN/C2N heterostructure retains type-II band alignment and has a decreased band gap under tensile strain (0 to +4%), which is more favorable for photocatalytic water splitting. Compressive strain (0 to -4%) converts the type-II band alignment to type-I, resulting in a wider light absorption range, making the GaN/C2N heterostructure more suitable for optoelectronic devices. These theoretical results are helpful for the design of GaN/C2N vdW heterostructures in the fields of optoelectronic devices and photocatalysts.
Controllable Synthesis for Carbon Self-Doping and Structural Defect Co-Modified G-C3n4: Enhanced Photocatalytic Oxidation Performance and the Mechanism Insight

Xinyue Wang,Luobin Sang,Liang Zhang,Guang Yang,Yihang Guo,Yuxin Yang

DOI: https://doi.org/10.1016/j.jallcom.2023.168921

IF: 6.2

2023-01-01

Journal of Alloys and Compounds

Abstract:For the purpose of improving the photocatalytic performance of graphitic carbon nitride (g-C3N4) in the field of contaminant elimination, an in-situ malonamide-assisted strategy is provided to prepare carbon self-doping and structural defect co-modified g-C3N4 (CDCN) via preprocessing of the mixture of urea and malonamide followed by thermal copolymerization. Changing the initial malonamide dosage can precisely adjust the carbon doping level and structural defect concentration of CDCN. The characteristic results confirm that the doped C derived from malonamide was successfully implanted into the g-C3N4 framework by replacing sp2 hybrid N atoms (C−N=C) in the heptazine units, simultaneously forming some structural defects. Additionally, the preprocessing endows CDCN with good textural properties. So, the optimal CDCN20 shows remarkably enhanced visible-light photocatalytic activity in eliminating acetaminophen (APAP) and methylparaben (MPB) in water than pristine g-C3N4. By combining experimental and theoretical calculating results, the synergistic effect of C self-doping and structural defect promoting the photocatalytic performance of g-C3N4 is revealed thoroughly. This work provides a controllable strategy for synthesizing effective C self-doped g-C3N4 and a new insight into electronic structure and band structure-regulated photocatalytic oxidation mechanisms.
Progress and Prospects of Non-Metal Doped Graphitic Carbon Nitride for Improved Photocatalytic Performances

Yiqing Wang,Shaohua Shen

DOI: https://doi.org/10.3866/pku.whxb201905080

2020-01-01

Acta Physico-Chimica Sinica

Abstract:Since Fujishima and Honda demonstrated the photoelectrochemical water splitting on TiO2 photoanode and Pt counter electrode, photocatalysis has been considered as one of the most promising technologies for solving both the problems of environmental pollution and energy shortage. This process can effectively use solar energy, the most abundant energy resource on the earth, to drive various catalytic reactions, such as water splitting, CO2 reduction, organic pollutant degradation, and organic synthesis, for energy generation and environmental purification. Except for the various metal-based semiconductors, such as metal oxides, metal sulfides, and metal oxynitrides, developed for photocatalysis, graphitic carbon nitride (g-C3N4) has attracted significant attention in the recent years because of its earth abundancy, non-toxicity, good stability, and relatively narrow band gap (2.7 eV) for visible light response. However, g-C3N4 suffers from insufficient absorption of visible light in the solar spectrum and rapid recombination of photogenerated electrons and holes, thus resulting in low photocatalytic activity. Until now, various strategies have been developed to enhance the photocatalytic activity of g-C3N4, including element doping, nanostructure and heterostructure design, and co-catalyst decoration. Among these methods, element doping has been found to be very effective for adjusting the unique electronic and molecular structures of g-C3N4, which could significantly expand the range of photoresponse under visible light and improve the charge separation. Especially, non-metal doping has been well investigated frequently to improve the photocatalytic activity of g-C3N4. The non-metal dopants commonly used for the doping of g-C3N4 include oxygen (O), phosphorus (P), sulfur (S), boron (B), and halogen (F, CI, Br, I) and also carbon (C) and nitrogen (N) (for self-doping), as they are easily accessible and can be introduced into the g-C3N4 framework through different physical and chemical synthetic methods. In this review article, the structural and optical properties of g-C3N4 is introduced first, followed by a brief introduction to the modification of g-C3N4 as photocatalysts. Then, the progress in the non-metal doped g-C3N4 with improved photocatalytic activity is reviewed in detail, with the photocatalytic mechanisms presented for easy understanding of the fundamentals of photocatalysis and for guiding in the design of novel g-C3N4 photocatalysts. Finally, the prospects of the modification of g-C3N4 for further advances in photocatalysis is presented.
First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Yafei Zhao,Wei Wang,Can Li,Liang He

DOI: https://doi.org/10.1038/s41598-017-17423-w

IF: 4.6

2017-01-01

Scientific Reports

Abstract:Recently, two dimensional transition metal dichalcogenides become popular research topics because of their unique crystal and electronic structure. In this work, the geometrical structure, electronic, electrical transport, redox potentials and photocatalytic properties of nonmetal (H, B, C, Si, N, P, As, O, S, Te, F, Cl, Br and I) doped monolayer MoSe2 were investigated by first principle calculations. The binding energy indicates that nonmetal doped MoSe2 are energetically favorable compared to Se vacancies, except B- and C-doped. We have found that nonmetal dopants with an even number of valence electrons doped MoSe2 have p-type conductivity. On the contrary, nonmetal dopants with an odd number of valence electrons doped MoSe2 have p-type or n-type conductivity; and they have better photocatalytic performance.
Surface Doping of Nonmetal Atoms Enhances Photocatalytic Performance of Monolayer GeSe for Degradation of Organic Pollution

Yafei Zhao,Xinzhong Li,Hehe Li,Liang He

DOI: https://doi.org/10.1016/j.cplett.2021.139156

IF: 2.719

2021-01-01

Chemical Physics Letters

Abstract:In this work, using first principles study, we report the structure, formation energy, electronic, optical and photocatalytic properties of a series of nonmetal atoms doped monolayer GeSe. O doped GeSe have the lowest formation energy (-1.73 eV). H, F, Cl, Br and I doped GeSe can absorb almost all sunlight. H and F doping reduced the photogenerated charge carrier recombination rate of GeSe by 1.28 and 1.84 times, respectively. H, F, Cl, Br and I doping enhances the oxidizability of photogenerated holes by more than 1.14 eV. This work provides an important guidance to design more efficient GeSe-based photocatalyst.
Electronic and energy level structural engineering of graphitic carbon nitride nanotubes with B and S co-doping for photocatalytic hydrogen evolution

Zhao Mo,Zhihuan Miao,Pengcheng Yan,Peipei Sun,Guanyu Wu,Xingwang Zhu,Cheng Ding,Qiang Zhu,Yucheng Lei,Hui Xu

DOI: https://doi.org/10.1016/j.jcis.2023.04.123

IF: 9.9

2023-04-28

Journal of Colloid and Interface Science

Abstract:The ideal photocatalyst used for photocatalytic water splitting requires strong light absorption, fast charge separation/transfer ability and abundant active sites. Heteroatom doping offers a promising and rational approach to optimize the photocatalytic activity. However, achieving high photocatalytic performance remains challenging if just relying on single-element doping. Herein, Boron (B) and sulfur (S) dopants are simultaneously introduced into graphitic carbon nitride (g-C 3 N 4 ) nanotubes by supramolecular selfassembly strategy. The developed B and S co-doped g-C 3 N 4 nanotubes (B,S-TCN) exhibited an outstanding photocatalytic in the conversion of H 2 O into H 2 (9.321 mmol g -1 h -1 ), and the corresponding external quantum efficiency (EQE) reached 5.3% under the irradiation of λ = 420 nm. It is well evidenced by the closely combined experimental and (density functional theory) DFT calculations: (1) the introduction of B dopants can facilitate H 2 O adsorption and drive interatomic electron transfer, leading to efficient water splitting reaction. (2) S dopants can stretch the VB position to promote the oxidation ability of g-C 3 N 4 , which can accelerate the consumption of holes and thus inhibit the recombination with electrons. (3) the simultaneous introduction of B and S can engineer the electronic and energy level structural of g-C 3 N 4 for optimizing interior charge transfer. Finally, the purpose of maximizing photocatalytic performance is achieved.

chemistry, physical
A strategy of enhancing the photoactivity of g-C 3N 4 via doping of nonmetal elements: A first-principles study

Xinguo Ma,Yanhui Lv,Jing Xu,Yanfang Liu,Ruiqin Zhang,Yongfa Zhu

DOI: https://doi.org/10.1021/jp308334x

2012-01-01

Abstract:An effective structural doping approach has been described to modify the photoelectrochemical properties of g-C3N4 by doping with nonmetal (sulfur or phosphorus) impurities. Here, the substitutional and interstitial doped models of g-C3N4 systems were constructed with different doped sites, and then their dopant formation energies and electronic properties were performed to study the stability and visible-light photoactivity using first-principles density functional theory, respectively. Our results have identified that are S atom preferentially substitutes for the edge N atom of g-C3N4; however, a P atom preferentially situates the interstitial sites of in-planar of g-C3N4. Furthermore, it is demonstrated that the doping with nonmetal impurities reduces the energy gap to enhance the visible-light absorption of g-C3N4. The increased dispersion of the contour distribution of the HOMO and LUMC brought by doping facilitates the enhancement of the carrier mobility, while the noncoplanar HOMO and LUMO favor the separation of photogenerated electron-hole pairs. Especially, P interstitial doping shows a prominent potential due to the appearance of a new channel for carrier migration. It should be pointed out that the proper doping form should be controlled, so that reasonable photoelectrochemical properties can be achieved.

Chemical characterization of a novel peptide from the neuroendocrine light yellow cells of Lymnaea stagnalis.

The Effects of Nonmetal Dopants on the Electronic, Optical and Chemical Performances of Monolayer G–c3n4 by First-Principles Study

Structures, Oxidation, and Charge Transport of Phosphorus‐Doped Germanium Nanocrystals

Band gap narrowing and doping level of heavily doped Germanium nanocrystals deduced from photoconductivity studies

Effect of boron and phosphorus codoping on the electronic and optical properties of graphitic carbon nitride monolayers: First-principle simulations

Substitutional Doped GeSe: Tunable Oxidative States with Strain Engineering

The stability, electronic and optical properties of nonmetal doped g-GaN:a first-principles calculation

Significantly enhanced photocatalytic performance of the N-doped GeP3 monolayer: A first-principles study

Doping and strain modulation of the electronic, optical and photocatalytic properties of the GaN/C2N heterostructure.

First-principles study of S-doped point defects with different charge states in monolayer g-C3N4

Band Engineering of Carbon Nitride Monolayers by N-type, P-type, and Isoelectronic Doping for Photocatalytic Applications

Adjustable Photocatalytic Ability of Monolayer G-C3n4 Utilizing Single–metal Atom: Density Functional Theory

Effects of Germanium Doping on the Microstructure and Photoelectrochemical Properties of TiO2 Films by Sol-Gel Method

Doping and strain modulation of the electronic,optical and photocatalytic properties of GaN/C2N heterostructure

Doping and Strain Modulation of the Electronic, Optical and Photocatalytic Properties of the GaN/C2N Heterostructure

Controllable Synthesis for Carbon Self-Doping and Structural Defect Co-Modified G-C3n4: Enhanced Photocatalytic Oxidation Performance and the Mechanism Insight

Progress and Prospects of Non-Metal Doped Graphitic Carbon Nitride for Improved Photocatalytic Performances

First-principles Study of Nonmetal Doped Monolayer MoSe2 for Tunable Electronic and Photocatalytic Properties

Surface Doping of Nonmetal Atoms Enhances Photocatalytic Performance of Monolayer GeSe for Degradation of Organic Pollution

Electronic and energy level structural engineering of graphitic carbon nitride nanotubes with B and S co-doping for photocatalytic hydrogen evolution

A strategy of enhancing the photoactivity of g-C 3N 4 via doping of nonmetal elements: A first-principles study